Effect of anisotropy on deformation and crack formation under the brittle removal of 6H-SiC during SPDT process
Introduction: Monocrystal SiC is representative of the third generation semiconductor materials, the efficient process technology of 6H-SiC wafer have always been a hot topic. Developing a SPDT processing method based on brittle removal mode with controllable surface/subsurface damage is an importan...
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| Format: | Article |
| Language: | English |
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Elsevier
2024-02-01
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| Series: | Journal of Advanced Research |
| Subjects: | |
| Online Access: | http://www.sciencedirect.com/science/article/pii/S2090123223001108 |
| _version_ | 1827368328146976768 |
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| author | Binbin Meng Chen Li |
| author_facet | Binbin Meng Chen Li |
| author_sort | Binbin Meng |
| collection | DOAJ |
| description | Introduction: Monocrystal SiC is representative of the third generation semiconductor materials, the efficient process technology of 6H-SiC wafer have always been a hot topic. Developing a SPDT processing method based on brittle removal mode with controllable surface/subsurface damage is an important approach to solve the processing difficulties of 6H-SiC. Objectives: This work aims to analyze the brittle removal process and fully explain the brittle separation behavior and deformation mechanism of 6H-SiC. The micro-scale crack propagation and the effect of anisotropy on crack distribution during machining process are investigated. Methods: Large-scale molecular dynamics simulation was used in this work. Results: Under the condition of brittle removal, shear fracture occurs in the front area of tool tip. Shear plane is high-index surface, independent of slip system. The location of tensile fracture is the cleavage plane of hexagonal system, and the fracture surface is composed of step-like joint planes or perfect plane structures. Cracks with self-healing capability appear in the area behind the tool when the surface to be machined is basal plane. When the surface to be machined is not basal plane, a large number of dislocations or cracks remain in subsurface region. Under brittle removal mode, a large amount of plastic deformation appears as well, and deformation mode is related to processing scheme. Conclusion: The brittle removal behavior of 6H-SiC under SPDT process has obvious anisotropy. Basal plane is more suitable for brittle removal of 6H-SiC without residual damage such as sub-surface cracks. The crack behind the tool generated by cleavage fracture can be repaired by itself. Fracture behavior is not related to dislocation. The processing method parallel to the c-axis can cause the generation of a large number of surface cracks. The (011¯0)/[21¯1¯0] and (112¯0)/[11¯00] mode is the best way to achieve plastic removal of 6H-SiC during SPDT process. |
| first_indexed | 2024-03-08T09:29:43Z |
| format | Article |
| id | doaj.art-31a3b7a1798b42e9a7af97220b6a5a8b |
| institution | Directory Open Access Journal |
| issn | 2090-1232 |
| language | English |
| last_indexed | 2024-03-08T09:29:43Z |
| publishDate | 2024-02-01 |
| publisher | Elsevier |
| record_format | Article |
| series | Journal of Advanced Research |
| spelling | doaj.art-31a3b7a1798b42e9a7af97220b6a5a8b2024-01-31T05:42:56ZengElsevierJournal of Advanced Research2090-12322024-02-0156103112Effect of anisotropy on deformation and crack formation under the brittle removal of 6H-SiC during SPDT processBinbin Meng0Chen Li1School of Future Science and Engineering, Soochow University, Suzhou 215000, China; Corresponding authors.State Key Laboratory of Robotics and System (HIT), Harbin Institute of Technology, Harbin 150001, China; Corresponding authors.Introduction: Monocrystal SiC is representative of the third generation semiconductor materials, the efficient process technology of 6H-SiC wafer have always been a hot topic. Developing a SPDT processing method based on brittle removal mode with controllable surface/subsurface damage is an important approach to solve the processing difficulties of 6H-SiC. Objectives: This work aims to analyze the brittle removal process and fully explain the brittle separation behavior and deformation mechanism of 6H-SiC. The micro-scale crack propagation and the effect of anisotropy on crack distribution during machining process are investigated. Methods: Large-scale molecular dynamics simulation was used in this work. Results: Under the condition of brittle removal, shear fracture occurs in the front area of tool tip. Shear plane is high-index surface, independent of slip system. The location of tensile fracture is the cleavage plane of hexagonal system, and the fracture surface is composed of step-like joint planes or perfect plane structures. Cracks with self-healing capability appear in the area behind the tool when the surface to be machined is basal plane. When the surface to be machined is not basal plane, a large number of dislocations or cracks remain in subsurface region. Under brittle removal mode, a large amount of plastic deformation appears as well, and deformation mode is related to processing scheme. Conclusion: The brittle removal behavior of 6H-SiC under SPDT process has obvious anisotropy. Basal plane is more suitable for brittle removal of 6H-SiC without residual damage such as sub-surface cracks. The crack behind the tool generated by cleavage fracture can be repaired by itself. Fracture behavior is not related to dislocation. The processing method parallel to the c-axis can cause the generation of a large number of surface cracks. The (011¯0)/[21¯1¯0] and (112¯0)/[11¯00] mode is the best way to achieve plastic removal of 6H-SiC during SPDT process.http://www.sciencedirect.com/science/article/pii/S20901232230011086H-SiCCrackAnisotropyMolecular dynamicsSubsurface damageSlip |
| spellingShingle | Binbin Meng Chen Li Effect of anisotropy on deformation and crack formation under the brittle removal of 6H-SiC during SPDT process Journal of Advanced Research 6H-SiC Crack Anisotropy Molecular dynamics Subsurface damage Slip |
| title | Effect of anisotropy on deformation and crack formation under the brittle removal of 6H-SiC during SPDT process |
| title_full | Effect of anisotropy on deformation and crack formation under the brittle removal of 6H-SiC during SPDT process |
| title_fullStr | Effect of anisotropy on deformation and crack formation under the brittle removal of 6H-SiC during SPDT process |
| title_full_unstemmed | Effect of anisotropy on deformation and crack formation under the brittle removal of 6H-SiC during SPDT process |
| title_short | Effect of anisotropy on deformation and crack formation under the brittle removal of 6H-SiC during SPDT process |
| title_sort | effect of anisotropy on deformation and crack formation under the brittle removal of 6h sic during spdt process |
| topic | 6H-SiC Crack Anisotropy Molecular dynamics Subsurface damage Slip |
| url | http://www.sciencedirect.com/science/article/pii/S2090123223001108 |
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