Study of p-SiC/n-GaN Hetero-Structural Double-Drift Region IMPATT Diode

Study of p-SiC/n-GaN Hetero-Structural Double-Drift Region IMPATT Diode

Nowadays, the immature p-GaN processes cannot meet the manufacturing requirements of GaN impact ionization avalanche transit time (IMPATT) diodes. Against this backdrop, the performance of wide-bandgap p-SiC/n-GaN heterojunction double-drift region (DDR) IMPATT diode is investigated in this paper fo...

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Bibliographic Details
Main Authors: Yang Dai, Qingsong Ye, Jiangtao Dang, Zhaoyang Lu, Weiwei Zhang, Xiaoyi Lei, Yunyao Zhang, Han Zhang, Chenguang Liao, Yang Li, Wu Zhao
Format: Article
Language:English
Published: MDPI AG 2021-07-01
Series:Micromachines
Subjects:
double-drift region (DDR)
Heterostructure
silicon carbide (SiC)
gallium nitride (GaN)
impact ionization avalanche transit time (IMPATT)
Online Access:https://www.mdpi.com/2072-666X/12/8/919

Internet

https://www.mdpi.com/2072-666X/12/8/919

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