Study of p-SiC/n-GaN Hetero-Structural Double-Drift Region IMPATT Diode
Nowadays, the immature p-GaN processes cannot meet the manufacturing requirements of GaN impact ionization avalanche transit time (IMPATT) diodes. Against this backdrop, the performance of wide-bandgap p-SiC/n-GaN heterojunction double-drift region (DDR) IMPATT diode is investigated in this paper fo...
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| Format: | Article |
| Language: | English |
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MDPI AG
2021-07-01
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| Series: | Micromachines |
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| Online Access: | https://www.mdpi.com/2072-666X/12/8/919 |
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| author | Yang Dai Qingsong Ye Jiangtao Dang Zhaoyang Lu Weiwei Zhang Xiaoyi Lei Yunyao Zhang Han Zhang Chenguang Liao Yang Li Wu Zhao |
| author_facet | Yang Dai Qingsong Ye Jiangtao Dang Zhaoyang Lu Weiwei Zhang Xiaoyi Lei Yunyao Zhang Han Zhang Chenguang Liao Yang Li Wu Zhao |
| author_sort | Yang Dai |
| collection | DOAJ |
| description | Nowadays, the immature p-GaN processes cannot meet the manufacturing requirements of GaN impact ionization avalanche transit time (IMPATT) diodes. Against this backdrop, the performance of wide-bandgap p-SiC/n-GaN heterojunction double-drift region (DDR) IMPATT diode is investigated in this paper for the first time. The direct-current (DC) steady-state, small-signal and large-signal characteristics are numerically simulated. The results show that compared with the conventional GaN single-drift region (SDR) IMPATT diode, the performance of the p-SiC/n-GaN DDR IMPATT proposed in this design, such as breakdown voltage, negative conductance, voltage modulation factor, radio frequency (RF) power and DC-RF conversion efficiency have been significantly improved. At the same time, the structure proposed in this design has a larger frequency bandwidth. Due to its greater potential in the RF power density, which is 1.97 MW/cm<sup>2</sup> in this study, indicates that the p-SiC/n-GaN heterojunction provides new possibilities for the design and manufacture of IMPATT diode. |
| first_indexed | 2024-03-10T08:34:57Z |
| format | Article |
| id | doaj.art-31ed6f8991ea468eb4c15d0702800f36 |
| institution | Directory Open Access Journal |
| issn | 2072-666X |
| language | English |
| last_indexed | 2024-03-10T08:34:57Z |
| publishDate | 2021-07-01 |
| publisher | MDPI AG |
| record_format | Article |
| series | Micromachines |
| spelling | doaj.art-31ed6f8991ea468eb4c15d0702800f362023-11-22T08:44:03ZengMDPI AGMicromachines2072-666X2021-07-0112891910.3390/mi12080919Study of p-SiC/n-GaN Hetero-Structural Double-Drift Region IMPATT DiodeYang Dai0Qingsong Ye1Jiangtao Dang2Zhaoyang Lu3Weiwei Zhang4Xiaoyi Lei5Yunyao Zhang6Han Zhang7Chenguang Liao8Yang Li9Wu Zhao10School of Information Science and Technology, Northwest University, Xi’an 710127, ChinaSchool of Information Science and Technology, Northwest University, Xi’an 710127, ChinaSchool of Information Science and Technology, Northwest University, Xi’an 710127, ChinaSchool of Information Science and Technology, Northwest University, Xi’an 710127, ChinaShanghai Precision Metrology and Testing Research Institute, Shanghai 201109, ChinaSchool of Information Science and Technology, Northwest University, Xi’an 710127, ChinaSchool of Information Science and Technology, Northwest University, Xi’an 710127, ChinaSchool of Information Science and Technology, Northwest University, Xi’an 710127, ChinaSchool of Information Science and Technology, Northwest University, Xi’an 710127, ChinaSchool of Microelectronics, Xidian University, Xi’an 710071, ChinaSchool of Information Science and Technology, Northwest University, Xi’an 710127, ChinaNowadays, the immature p-GaN processes cannot meet the manufacturing requirements of GaN impact ionization avalanche transit time (IMPATT) diodes. Against this backdrop, the performance of wide-bandgap p-SiC/n-GaN heterojunction double-drift region (DDR) IMPATT diode is investigated in this paper for the first time. The direct-current (DC) steady-state, small-signal and large-signal characteristics are numerically simulated. The results show that compared with the conventional GaN single-drift region (SDR) IMPATT diode, the performance of the p-SiC/n-GaN DDR IMPATT proposed in this design, such as breakdown voltage, negative conductance, voltage modulation factor, radio frequency (RF) power and DC-RF conversion efficiency have been significantly improved. At the same time, the structure proposed in this design has a larger frequency bandwidth. Due to its greater potential in the RF power density, which is 1.97 MW/cm<sup>2</sup> in this study, indicates that the p-SiC/n-GaN heterojunction provides new possibilities for the design and manufacture of IMPATT diode.https://www.mdpi.com/2072-666X/12/8/919double-drift region (DDR)Heterostructuresilicon carbide (SiC)gallium nitride (GaN)impact ionization avalanche transit time (IMPATT) |
| spellingShingle | Yang Dai Qingsong Ye Jiangtao Dang Zhaoyang Lu Weiwei Zhang Xiaoyi Lei Yunyao Zhang Han Zhang Chenguang Liao Yang Li Wu Zhao Study of p-SiC/n-GaN Hetero-Structural Double-Drift Region IMPATT Diode Micromachines double-drift region (DDR) Heterostructure silicon carbide (SiC) gallium nitride (GaN) impact ionization avalanche transit time (IMPATT) |
| title | Study of p-SiC/n-GaN Hetero-Structural Double-Drift Region IMPATT Diode |
| title_full | Study of p-SiC/n-GaN Hetero-Structural Double-Drift Region IMPATT Diode |
| title_fullStr | Study of p-SiC/n-GaN Hetero-Structural Double-Drift Region IMPATT Diode |
| title_full_unstemmed | Study of p-SiC/n-GaN Hetero-Structural Double-Drift Region IMPATT Diode |
| title_short | Study of p-SiC/n-GaN Hetero-Structural Double-Drift Region IMPATT Diode |
| title_sort | study of p sic n gan hetero structural double drift region impatt diode |
| topic | double-drift region (DDR) Heterostructure silicon carbide (SiC) gallium nitride (GaN) impact ionization avalanche transit time (IMPATT) |
| url | https://www.mdpi.com/2072-666X/12/8/919 |
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