Influence of NF<sub>3</sub> Plasma-Treated HfO<sub>2</sub> Gate Insulator Surface on Tin Oxide Thin-Film Transistors
We studied the impact of NF<sub>3</sub> plasma treatment on the HfO<sub>2</sub> gate insulator of amorphous tin oxide (a-SnO<sub>x</sub>) thin-film transistors (TFTs). The plasma treatment was for 0, 10, or 30 s. The HfO<sub>2</sub> insulator demonstra...
| Main Authors: | , |
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| Format: | Article |
| Language: | English |
| Published: |
MDPI AG
2023-11-01
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| Series: | Materials |
| Subjects: | |
| Online Access: | https://www.mdpi.com/1996-1944/16/22/7172 |