A Comprehensive Overview of the Temperature-Dependent Modeling of the High-Power GaN HEMT Technology Using mm-Wave Scattering Parameter Measurements<br />

A Comprehensive Overview of the Temperature-Dependent Modeling of the High-Power GaN HEMT Technology Using mm-Wave Scattering Parameter Measurements<br />

The gallium-nitride (GaN) high electron-mobility transistor (HEMT) technology has emerged as an attractive candidate for high-frequency, high-power, and high-temperature applications due to the unique physical characteristics of the GaN material. Over the years, much effort has been spent on measure...

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Bibliographic Details
Main Authors: Giovanni Crupi, Mariangela Latino, Giovanni Gugliandolo, Zlatica Marinković, Jialin Cai, Gianni Bosi, Antonio Raffo, Enza Fazio, Nicola Donato
Format: Article
Language:English
Published: MDPI AG 2023-04-01
Series:Electronics
Subjects:
artificial neural networks
equivalent circuit
GaN
HEMT
gate recurrent units
high-power
Online Access:https://www.mdpi.com/2079-9292/12/8/1771

Internet

https://www.mdpi.com/2079-9292/12/8/1771

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