A Comprehensive Overview of the Temperature-Dependent Modeling of the High-Power GaN HEMT Technology Using mm-Wave Scattering Parameter Measurements<br />
The gallium-nitride (GaN) high electron-mobility transistor (HEMT) technology has emerged as an attractive candidate for high-frequency, high-power, and high-temperature applications due to the unique physical characteristics of the GaN material. Over the years, much effort has been spent on measure...
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| Format: | Article |
| Language: | English |
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MDPI AG
2023-04-01
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| Series: | Electronics |
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| Online Access: | https://www.mdpi.com/2079-9292/12/8/1771 |
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| author | Giovanni Crupi Mariangela Latino Giovanni Gugliandolo Zlatica Marinković Jialin Cai Gianni Bosi Antonio Raffo Enza Fazio Nicola Donato |
| author_facet | Giovanni Crupi Mariangela Latino Giovanni Gugliandolo Zlatica Marinković Jialin Cai Gianni Bosi Antonio Raffo Enza Fazio Nicola Donato |
| author_sort | Giovanni Crupi |
| collection | DOAJ |
| description | The gallium-nitride (GaN) high electron-mobility transistor (HEMT) technology has emerged as an attractive candidate for high-frequency, high-power, and high-temperature applications due to the unique physical characteristics of the GaN material. Over the years, much effort has been spent on measurement-based modeling since accurate models are essential for allowing the use of this advanced transistor technology at its best. The present analysis is focused on the modeling of the scattering (<i>S</i>-) parameter measurements for a 0.25 μm GaN HEMT on silicon carbide (SiC) substrate at extreme operating conditions: a large gate width (i.e., the transistor is based on an interdigitated layout consisting of ten fingers, each with a length of 150 μm, resulting in a total gate periphery of 1.5 mm), a high ambient temperature (i.e., from 35 °C up to 200 °C with a step of 55 °C), a high dissipated power (i.e., 5.1 W at 35 °C), and a high frequency in the millimeter-wave range (i.e., from 200 MHz up to 65 GHz with a step of 200 MHz). Three different modeling approaches are investigated: the equivalent-circuit model, artificial neural networks (ANNs), and gated recurrent units (GRUs). As is shown, each modeling approach has its pros and cons that need to be considered, depending on the target performance and their specifications. This implies that an appropriate selection of the transistor modeling approach should be based on discerning and prioritizing the key features that are indeed the most important for a given application. |
| first_indexed | 2024-03-11T05:04:53Z |
| format | Article |
| id | doaj.art-32686027c5a843389f55f5048bd26c70 |
| institution | Directory Open Access Journal |
| issn | 2079-9292 |
| language | English |
| last_indexed | 2024-03-11T05:04:53Z |
| publishDate | 2023-04-01 |
| publisher | MDPI AG |
| record_format | Article |
| series | Electronics |
| spelling | doaj.art-32686027c5a843389f55f5048bd26c702023-11-17T19:00:40ZengMDPI AGElectronics2079-92922023-04-01128177110.3390/electronics12081771A Comprehensive Overview of the Temperature-Dependent Modeling of the High-Power GaN HEMT Technology Using mm-Wave Scattering Parameter Measurements<br />Giovanni Crupi0Mariangela Latino1Giovanni Gugliandolo2Zlatica Marinković3Jialin Cai4Gianni Bosi5Antonio Raffo6Enza Fazio7Nicola Donato8Department of Biomedical and Dental Sciences and Morphofunctional Imaging, University of Messina, 98125 Messina, ItalyEngineering Department, University of Messina, 98166 Messina, ItalyEngineering Department, University of Messina, 98166 Messina, ItalyFaculty of Electronic Engineering, University of Niš, 18000 Niš, SerbiaKey Laboratory of RF Circuit and System, Ministry of Education, College of Electronics and Information, Hangzhou Dianzi University, Hangzhou 310018, ChinaEngineering Department, University of Ferrara, 44122 Ferrara, ItalyEngineering Department, University of Ferrara, 44122 Ferrara, ItalyDepartment of Mathematical and Computational Sciences, Physics Science and Earth Sciences, University of Messina, 98166 Messina, ItalyEngineering Department, University of Messina, 98166 Messina, ItalyThe gallium-nitride (GaN) high electron-mobility transistor (HEMT) technology has emerged as an attractive candidate for high-frequency, high-power, and high-temperature applications due to the unique physical characteristics of the GaN material. Over the years, much effort has been spent on measurement-based modeling since accurate models are essential for allowing the use of this advanced transistor technology at its best. The present analysis is focused on the modeling of the scattering (<i>S</i>-) parameter measurements for a 0.25 μm GaN HEMT on silicon carbide (SiC) substrate at extreme operating conditions: a large gate width (i.e., the transistor is based on an interdigitated layout consisting of ten fingers, each with a length of 150 μm, resulting in a total gate periphery of 1.5 mm), a high ambient temperature (i.e., from 35 °C up to 200 °C with a step of 55 °C), a high dissipated power (i.e., 5.1 W at 35 °C), and a high frequency in the millimeter-wave range (i.e., from 200 MHz up to 65 GHz with a step of 200 MHz). Three different modeling approaches are investigated: the equivalent-circuit model, artificial neural networks (ANNs), and gated recurrent units (GRUs). As is shown, each modeling approach has its pros and cons that need to be considered, depending on the target performance and their specifications. This implies that an appropriate selection of the transistor modeling approach should be based on discerning and prioritizing the key features that are indeed the most important for a given application.https://www.mdpi.com/2079-9292/12/8/1771artificial neural networksequivalent circuitGaNHEMTgate recurrent unitshigh-power |
| spellingShingle | Giovanni Crupi Mariangela Latino Giovanni Gugliandolo Zlatica Marinković Jialin Cai Gianni Bosi Antonio Raffo Enza Fazio Nicola Donato A Comprehensive Overview of the Temperature-Dependent Modeling of the High-Power GaN HEMT Technology Using mm-Wave Scattering Parameter Measurements<br /> Electronics artificial neural networks equivalent circuit GaN HEMT gate recurrent units high-power |
| title | A Comprehensive Overview of the Temperature-Dependent Modeling of the High-Power GaN HEMT Technology Using mm-Wave Scattering Parameter Measurements<br /> |
| title_full | A Comprehensive Overview of the Temperature-Dependent Modeling of the High-Power GaN HEMT Technology Using mm-Wave Scattering Parameter Measurements<br /> |
| title_fullStr | A Comprehensive Overview of the Temperature-Dependent Modeling of the High-Power GaN HEMT Technology Using mm-Wave Scattering Parameter Measurements<br /> |
| title_full_unstemmed | A Comprehensive Overview of the Temperature-Dependent Modeling of the High-Power GaN HEMT Technology Using mm-Wave Scattering Parameter Measurements<br /> |
| title_short | A Comprehensive Overview of the Temperature-Dependent Modeling of the High-Power GaN HEMT Technology Using mm-Wave Scattering Parameter Measurements<br /> |
| title_sort | comprehensive overview of the temperature dependent modeling of the high power gan hemt technology using mm wave scattering parameter measurements br |
| topic | artificial neural networks equivalent circuit GaN HEMT gate recurrent units high-power |
| url | https://www.mdpi.com/2079-9292/12/8/1771 |
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