Comprehensive Study of Lanthanum Aluminate High-Dielectric-Constant Gate Oxides for Advanced CMOS Devices
A comprehensive study of the electrical and physical characteristics of Lanthanum Aluminate (LaAlO3) high-dielectric-constant gate oxides for advanced CMOS devices was performed. The most distinctive feature of LaAlO3 as compared with Hf-based high-k materials is the thermal stability at the interfa...
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| Format: | Article |
| Language: | English |
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MDPI AG
2012-03-01
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| Series: | Materials |
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| Online Access: | http://www.mdpi.com/1996-1944/5/3/443/ |