Comprehensive Study of Lanthanum Aluminate High-Dielectric-Constant Gate Oxides for Advanced CMOS Devices
A comprehensive study of the electrical and physical characteristics of Lanthanum Aluminate (LaAlO3) high-dielectric-constant gate oxides for advanced CMOS devices was performed. The most distinctive feature of LaAlO3 as compared with Hf-based high-k materials is the thermal stability at the interfa...
Main Author: | Masamichi Suzuki |
---|---|
Format: | Article |
Language: | English |
Published: |
MDPI AG
2012-03-01
|
Series: | Materials |
Subjects: | |
Online Access: | http://www.mdpi.com/1996-1944/5/3/443/ |
Similar Items
-
Improved Dielectrically Modulated Quad Gate Schottky Barrier MOSFET Biosensor
by: Papanasam Esakki, et al.
Published: (2023-03-01) -
Design of Cylindrical Surrounding Double-Gate MOSFET With Fabrication Steps Using a Layer-by-Layer Approach
by: Naveenbalaji Gowthaman, et al.
Published: (2022-01-01) -
Gate Current in p-GaN Gate HEMTs as a Channel Temperature Sensitive Parameter: A Comparative Study between Schottky- and Ohmic-Gate GaN HEMTs
by: Alessandro Borghese, et al.
Published: (2021-12-01) -
Nano-CMOS gate dielectric engineering /
by: 515239 Wong, Hei
Published: (2012) -
SiC Heterojunction Trench MOSFET with a Buried P-Type Pillar for the Low Gate-Drain Charge and Switching Loss
by: Shenglong Ran, et al.
Published: (2022-02-01)