Diffusive and ballistic transport in thin InSb nanowire devices using a few-layer-graphene-AlO x gate

Diffusive and ballistic transport in thin InSb nanowire devices using a few-layer-graphene-AlO x gate

Quantum devices based on InSb nanowires (NWs) are a prime candidate system for realizing and exploring topologically-protected quantum states and for electrically-controlled spin-based qubits. The influence of disorder on achieving reliable quantum transport regimes has been studied theoretically, h...

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Bibliographic Details
Main Authors: Lior Shani, Pim Lueb, Gavin Menning, Mohit Gupta, Colin Riggert, Tyler Littmann, Frey Hackbarth, Marco Rossi, Jason Jung, Ghada Badawy, Marcel A Verheijen, Paul A Crowell, Erik P A M Bakkers, Vlad S Pribiag
Format: Article
Language:English
Published: IOP Publishing 2024-01-01
Series:Materials for Quantum Technology
Subjects:
InSb
nanowire
quantum transport
few-layers-graphene
Online Access:https://doi.org/10.1088/2633-4356/ad2d6b

Internet

https://doi.org/10.1088/2633-4356/ad2d6b

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