Diffusive and ballistic transport in thin InSb nanowire devices using a few-layer-graphene-AlO x gate
Quantum devices based on InSb nanowires (NWs) are a prime candidate system for realizing and exploring topologically-protected quantum states and for electrically-controlled spin-based qubits. The influence of disorder on achieving reliable quantum transport regimes has been studied theoretically, h...
| Main Authors: | , , , , , , , , , , , , , |
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| Format: | Article |
| Language: | English |
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IOP Publishing
2024-01-01
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| Series: | Materials for Quantum Technology |
| Subjects: | |
| Online Access: | https://doi.org/10.1088/2633-4356/ad2d6b |
| _version_ | 1797265101961560064 |
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| author | Lior Shani Pim Lueb Gavin Menning Mohit Gupta Colin Riggert Tyler Littmann Frey Hackbarth Marco Rossi Jason Jung Ghada Badawy Marcel A Verheijen Paul A Crowell Erik P A M Bakkers Vlad S Pribiag |
| author_facet | Lior Shani Pim Lueb Gavin Menning Mohit Gupta Colin Riggert Tyler Littmann Frey Hackbarth Marco Rossi Jason Jung Ghada Badawy Marcel A Verheijen Paul A Crowell Erik P A M Bakkers Vlad S Pribiag |
| author_sort | Lior Shani |
| collection | DOAJ |
| description | Quantum devices based on InSb nanowires (NWs) are a prime candidate system for realizing and exploring topologically-protected quantum states and for electrically-controlled spin-based qubits. The influence of disorder on achieving reliable quantum transport regimes has been studied theoretically, highlighting the importance of optimizing both growth and nanofabrication. In this work, we consider both aspects. We developed InSb NW with thin diameters, as well as a novel gating approach, involving few-layer graphene and atomic layer deposition-grown AlO _x . Low-temperature electronic transport measurements of these devices reveal conductance plateaus and Fabry–Pérot interference, evidencing phase-coherent transport in the regime of few quantum modes. The approaches developed in this work could help mitigate the role of material and fabrication-induced disorder in semiconductor-based quantum devices. |
| first_indexed | 2024-04-25T00:39:27Z |
| format | Article |
| id | doaj.art-328883758b7746c98d444f895e6f1689 |
| institution | Directory Open Access Journal |
| issn | 2633-4356 |
| language | English |
| last_indexed | 2024-04-25T00:39:27Z |
| publishDate | 2024-01-01 |
| publisher | IOP Publishing |
| record_format | Article |
| series | Materials for Quantum Technology |
| spelling | doaj.art-328883758b7746c98d444f895e6f16892024-03-12T12:26:54ZengIOP PublishingMaterials for Quantum Technology2633-43562024-01-014101510110.1088/2633-4356/ad2d6bDiffusive and ballistic transport in thin InSb nanowire devices using a few-layer-graphene-AlO x gateLior Shani0https://orcid.org/0000-0003-1504-0534Pim Lueb1Gavin Menning2Mohit Gupta3https://orcid.org/0000-0003-0289-3343Colin Riggert4Tyler Littmann5Frey Hackbarth6Marco Rossi7Jason Jung8Ghada Badawy9Marcel A Verheijen10https://orcid.org/0000-0002-8749-7755Paul A Crowell11Erik P A M Bakkers12Vlad S Pribiag13https://orcid.org/0000-0003-1784-6347School of Physics and Astronomy, University of Minnesota , Minneapolis, MN 55455, United States of AmericaDepartment of Applied Physics, Eindhoven University of Technology , Eindhoven, The NetherlandsSchool of Physics and Astronomy, University of Minnesota , Minneapolis, MN 55455, United States of AmericaSchool of Physics and Astronomy, University of Minnesota , Minneapolis, MN 55455, United States of AmericaSchool of Physics and Astronomy, University of Minnesota , Minneapolis, MN 55455, United States of AmericaSchool of Physics and Astronomy, University of Minnesota , Minneapolis, MN 55455, United States of AmericaSchool of Physics and Astronomy, University of Minnesota , Minneapolis, MN 55455, United States of AmericaDepartment of Applied Physics, Eindhoven University of Technology , Eindhoven, The NetherlandsDepartment of Applied Physics, Eindhoven University of Technology , Eindhoven, The NetherlandsDepartment of Applied Physics, Eindhoven University of Technology , Eindhoven, The NetherlandsDepartment of Applied Physics, Eindhoven University of Technology , Eindhoven, The NetherlandsSchool of Physics and Astronomy, University of Minnesota , Minneapolis, MN 55455, United States of AmericaDepartment of Applied Physics, Eindhoven University of Technology , Eindhoven, The NetherlandsSchool of Physics and Astronomy, University of Minnesota , Minneapolis, MN 55455, United States of AmericaQuantum devices based on InSb nanowires (NWs) are a prime candidate system for realizing and exploring topologically-protected quantum states and for electrically-controlled spin-based qubits. The influence of disorder on achieving reliable quantum transport regimes has been studied theoretically, highlighting the importance of optimizing both growth and nanofabrication. In this work, we consider both aspects. We developed InSb NW with thin diameters, as well as a novel gating approach, involving few-layer graphene and atomic layer deposition-grown AlO _x . Low-temperature electronic transport measurements of these devices reveal conductance plateaus and Fabry–Pérot interference, evidencing phase-coherent transport in the regime of few quantum modes. The approaches developed in this work could help mitigate the role of material and fabrication-induced disorder in semiconductor-based quantum devices.https://doi.org/10.1088/2633-4356/ad2d6bInSbnanowirequantum transportfew-layers-graphene |
| spellingShingle | Lior Shani Pim Lueb Gavin Menning Mohit Gupta Colin Riggert Tyler Littmann Frey Hackbarth Marco Rossi Jason Jung Ghada Badawy Marcel A Verheijen Paul A Crowell Erik P A M Bakkers Vlad S Pribiag Diffusive and ballistic transport in thin InSb nanowire devices using a few-layer-graphene-AlO x gate Materials for Quantum Technology InSb nanowire quantum transport few-layers-graphene |
| title | Diffusive and ballistic transport in thin InSb nanowire devices using a few-layer-graphene-AlO x gate |
| title_full | Diffusive and ballistic transport in thin InSb nanowire devices using a few-layer-graphene-AlO x gate |
| title_fullStr | Diffusive and ballistic transport in thin InSb nanowire devices using a few-layer-graphene-AlO x gate |
| title_full_unstemmed | Diffusive and ballistic transport in thin InSb nanowire devices using a few-layer-graphene-AlO x gate |
| title_short | Diffusive and ballistic transport in thin InSb nanowire devices using a few-layer-graphene-AlO x gate |
| title_sort | diffusive and ballistic transport in thin insb nanowire devices using a few layer graphene alo x gate |
| topic | InSb nanowire quantum transport few-layers-graphene |
| url | https://doi.org/10.1088/2633-4356/ad2d6b |
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