The Effect of Carbon Doping on the Crystal Structure and Electrical Properties of Sb<sub>2</sub>Te<sub>3</sub>

The Effect of Carbon Doping on the Crystal Structure and Electrical Properties of Sb<sub>2</sub>Te<sub>3</sub>

As a new generation of non-volatile memory, phase change random access memory (PCRAM) has the potential to fill the hierarchical gap between DRAM and NAND FLASH in computer storage. Sb<sub>2</sub>Te<sub>3</sub>, one of the candidate materials for high-speed PCRAM, has high cr...

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Bibliographic Details
Main Authors: Jie Zhang, Ningning Rong, Peng Xu, Yuchen Xiao, Aijiang Lu, Wenxiong Song, Sannian Song, Zhitang Song, Yongcheng Liang, Liangcai Wu
Format: Article
Language:English
Published: MDPI AG 2023-02-01
Series:Nanomaterials
Subjects:
phase change random access memory
C-doped Sb<sub>2</sub>Te<sub>3</sub>
density functional theory
formation energy
continuously adjustable resistance value
Online Access:https://www.mdpi.com/2079-4991/13/4/671

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https://www.mdpi.com/2079-4991/13/4/671

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