GRNN-Based Scattering Parameter Modeling Investigation for HBT at Different Temperature
In this paper, the scattering parameter (S-parameter) modeling method for heterojunction bipolar transistor (HBT) at different temperatures is investigated. S-parameters of HBT at different temperatures are randomly divided into training and testing sets, which are modeled by radial basis function (...
| Main Authors: | , , |
|---|---|
| Format: | Article |
| Language: | English |
| Published: |
IEEE
2023-01-01
|
| Series: | IEEE Access |
| Subjects: | |
| Online Access: | https://ieeexplore.ieee.org/document/10103530/ |