Hydrogen-terminated diamond MOSFETs on (0 0 1) single crystal diamond with state of the art high RF power density
Diamond field-effect transistor (FET) has great application potential for high frequency and high power electronic devices. In this work, diamond FETs were fabricated on (0 0 1) single crystal diamond with homoepitaxial layer. The nitrogen impurity content in the homoepitaxial layer is greatly decre...
Main Authors: | , , , , , , , , |
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Format: | Article |
Language: | English |
Published: |
Taylor & Francis Group
2022-12-01
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Series: | Functional Diamond |
Subjects: | |
Online Access: | http://dx.doi.org/10.1080/26941112.2022.2082853 |