Hydrogen-terminated diamond MOSFETs on (0 0 1) single crystal diamond with state of the art high RF power density

Hydrogen-terminated diamond MOSFETs on (0 0 1) single crystal diamond with state of the art high RF power density

Diamond field-effect transistor (FET) has great application potential for high frequency and high power electronic devices. In this work, diamond FETs were fabricated on (0 0 1) single crystal diamond with homoepitaxial layer. The nitrogen impurity content in the homoepitaxial layer is greatly decre...

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Bibliographic Details
Main Authors: Cui Yu, Chuangjie Zhou, Jianchao Guo, Zezhao He, Mengyu Ma, Hao Yu, Xubo Song, Aimin Bu, Zhihong Feng
Format: Article
Language:English
Published: Taylor & Francis Group 2022-12-01
Series:Functional Diamond
Subjects:
diamond
field effect transistor
frequency
power density
Online Access:http://dx.doi.org/10.1080/26941112.2022.2082853

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