Alloying and Strain Relaxation in SiGe Islands Grown on Pit-Patterned Si(001) Substrates Probed by Nanotomography

Alloying and Strain Relaxation in SiGe Islands Grown on Pit-Patterned Si(001) Substrates Probed by Nanotomography

<p>Abstract</p> <p>The three-dimensional composition profiles of individual SiGe/Si(001) islands grown on planar and pit-patterned substrates are determined by atomic force microscopy (AFM)-based nanotomography. The observed differences in lateral and vertical composition gradients...

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Bibliographic Details
Main Authors: Merdzhanova T, Pezzoli F, Stoffel M, Rastelli A, Schmidt OG
Format: Article
Language:English
Published: SpringerOpen 2009-01-01
Series:Nanoscale Research Letters
Subjects:
SiGe
Island
Alloying
Wet etching
Tomography
AFM
Lateral ordering
Online Access:http://dx.doi.org/10.1007/s11671-009-9360-4

Internet

http://dx.doi.org/10.1007/s11671-009-9360-4

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