Ti2MnZ (Z=Al, Ga, In) compounds: Nearly spin gapless semiconductors
Ti2MnZ (Z=Al, Ga, In) compounds with CuHg2Ti-type structure are predicted to have the different width of band gap in two spin channels and exhibit a nearly spin gapless semiconductivity. There are different origins of the band gap in spin-up and spin-down channels. The width of the band gap can be a...
| Main Authors: | , , , , , , , |
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| Format: | Article |
| Language: | English |
| Published: |
AIP Publishing LLC
2014-04-01
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| Series: | AIP Advances |
| Online Access: | http://dx.doi.org/10.1063/1.4871403 |