Ti2MnZ (Z=Al, Ga, In) compounds: Nearly spin gapless semiconductors
Ti2MnZ (Z=Al, Ga, In) compounds with CuHg2Ti-type structure are predicted to have the different width of band gap in two spin channels and exhibit a nearly spin gapless semiconductivity. There are different origins of the band gap in spin-up and spin-down channels. The width of the band gap can be a...
| Main Authors: | , , , , , , , |
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| Format: | Article |
| Language: | English |
| Published: |
AIP Publishing LLC
2014-04-01
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| Series: | AIP Advances |
| Online Access: | http://dx.doi.org/10.1063/1.4871403 |
| _version_ | 1818413570706112512 |
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| author | H. Y. Jia X. F. Dai L. Y. Wang R. Liu X. T. Wang P. P. Li Y. T. Cui G. D. Liu |
| author_facet | H. Y. Jia X. F. Dai L. Y. Wang R. Liu X. T. Wang P. P. Li Y. T. Cui G. D. Liu |
| author_sort | H. Y. Jia |
| collection | DOAJ |
| description | Ti2MnZ (Z=Al, Ga, In) compounds with CuHg2Ti-type structure are predicted to have the different width of band gap in two spin channels and exhibit a nearly spin gapless semiconductivity. There are different origins of the band gap in spin-up and spin-down channels. The width of the band gap can be adjusted by changing the lattice parameter or doping congeners. These compounds are completely-compensated ferrimagnets with a zero magnetic moment. |
| first_indexed | 2024-12-14T11:05:18Z |
| format | Article |
| id | doaj.art-32c165e7a9824514a9318b1b438751c9 |
| institution | Directory Open Access Journal |
| issn | 2158-3226 |
| language | English |
| last_indexed | 2024-12-14T11:05:18Z |
| publishDate | 2014-04-01 |
| publisher | AIP Publishing LLC |
| record_format | Article |
| series | AIP Advances |
| spelling | doaj.art-32c165e7a9824514a9318b1b438751c92022-12-21T23:04:33ZengAIP Publishing LLCAIP Advances2158-32262014-04-0144047113047113-610.1063/1.4871403011404ADVTi2MnZ (Z=Al, Ga, In) compounds: Nearly spin gapless semiconductorsH. Y. Jia0X. F. Dai1L. Y. Wang2R. Liu3X. T. Wang4P. P. Li5Y. T. Cui6G. D. Liu7School of Material Sciences and Engineering, Hebei University of Technology, Tianjin 300130, P. R. ChinaSchool of Material Sciences and Engineering, Hebei University of Technology, Tianjin 300130, P. R. ChinaSchool of Material Sciences and Engineering, Hebei University of Technology, Tianjin 300130, P. R. ChinaSchool of Material Sciences and Engineering, Hebei University of Technology, Tianjin 300130, P. R. ChinaSchool of Material Sciences and Engineering, Hebei University of Technology, Tianjin 300130, P. R. ChinaSchool of Material Sciences and Engineering, Hebei University of Technology, Tianjin 300130, P. R. ChinaCollege of Physics and Information Technology, Chongqing Normal University, 401331, Chongqing, People's Republic of ChinaSchool of Material Sciences and Engineering, Hebei University of Technology, Tianjin 300130, P. R. ChinaTi2MnZ (Z=Al, Ga, In) compounds with CuHg2Ti-type structure are predicted to have the different width of band gap in two spin channels and exhibit a nearly spin gapless semiconductivity. There are different origins of the band gap in spin-up and spin-down channels. The width of the band gap can be adjusted by changing the lattice parameter or doping congeners. These compounds are completely-compensated ferrimagnets with a zero magnetic moment.http://dx.doi.org/10.1063/1.4871403 |
| spellingShingle | H. Y. Jia X. F. Dai L. Y. Wang R. Liu X. T. Wang P. P. Li Y. T. Cui G. D. Liu Ti2MnZ (Z=Al, Ga, In) compounds: Nearly spin gapless semiconductors AIP Advances |
| title | Ti2MnZ (Z=Al, Ga, In) compounds: Nearly spin gapless semiconductors |
| title_full | Ti2MnZ (Z=Al, Ga, In) compounds: Nearly spin gapless semiconductors |
| title_fullStr | Ti2MnZ (Z=Al, Ga, In) compounds: Nearly spin gapless semiconductors |
| title_full_unstemmed | Ti2MnZ (Z=Al, Ga, In) compounds: Nearly spin gapless semiconductors |
| title_short | Ti2MnZ (Z=Al, Ga, In) compounds: Nearly spin gapless semiconductors |
| title_sort | ti2mnz z al ga in compounds nearly spin gapless semiconductors |
| url | http://dx.doi.org/10.1063/1.4871403 |
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