Demonstration of Acceptor-Like Traps at Positive Polarization Interfaces in Ga-Polar P-type (AlGaN/AlN)/GaN Superlattices

Demonstration of Acceptor-Like Traps at Positive Polarization Interfaces in Ga-Polar P-type (AlGaN/AlN)/GaN Superlattices

The shortcomings with acceptors in p-type III-nitride semiconductors have resulted in not many efforts being presented on III-nitride based p-channel electronic devices (here, field effect transistors (FETs)). The polarization effects in III-nitride superlattices (SLs) lead to the periodic oscillati...

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Bibliographic Details
Main Authors: Athith Krishna, Aditya Raj, Nirupam Hatui, Stacia Keller, Umesh K. Mishra
Format: Article
Language:English
Published: MDPI AG 2022-05-01
Series:Crystals
Subjects:
GaN
acceptors
superlattices
Online Access:https://www.mdpi.com/2073-4352/12/6/784

Internet

https://www.mdpi.com/2073-4352/12/6/784

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