Influence of Metallic Indium Concentration on the Properties of Indium Oxide Thin Films
Current–voltage characteristics of indium-embedded indium oxide thin films (600–850 Å), with Ag electrodes approximately 1000 Å thick, prepared by reactive evaporation of pure metallic indium in partial air pressure have been studied for substrate temperatures between 50 and 125°C. The optical prope...
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| Format: | Article |
| Language: | English |
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De Gruyter
2016-10-01
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| Series: | High Temperature Materials and Processes |
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| Online Access: | https://doi.org/10.1515/htmp-2015-0055 |