Studying the Effect of Annealing Temperature on some Physical Properties of In2O3 Thin Films
In this study, In2O3 thin films were deposited on quartz substrates bypulsed laser deposition technique at room temperature and followed bythermally annealing at 300℃, 400℃ and 500℃ for 1 hour. The optical bandgap was found to increase with the annealing temperature from 3.5 to 3.85 eVand the transm...
| Main Authors: | , |
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| Format: | Article |
| Language: | English |
| Published: |
Unviversity of Technology- Iraq
2018-12-01
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| Series: | Engineering and Technology Journal |
| Subjects: | |
| Online Access: | https://etj.uotechnology.edu.iq/article_175476_6ab784c89024691a7d9b3208771142ee.pdf |