Studying the Effect of Annealing Temperature on some Physical Properties of In2O3 Thin Films

In this study, In2O3 thin films were deposited on quartz substrates bypulsed laser deposition technique at room temperature and followed bythermally annealing at 300℃, 400℃ and 500℃ for 1 hour. The optical bandgap was found to increase with the annealing temperature from 3.5 to 3.85 eVand the transm...

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Main Authors: Duaa Mohammed, Muslim Jawad
Format: Article
Language:English
Published: Unviversity of Technology- Iraq 2018-12-01
Series:Engineering and Technology Journal
Subjects:
Online Access:https://etj.uotechnology.edu.iq/article_175476_6ab784c89024691a7d9b3208771142ee.pdf
_version_ 1797325922057060352
author Duaa Mohammed
Muslim Jawad
author_facet Duaa Mohammed
Muslim Jawad
author_sort Duaa Mohammed
collection DOAJ
description In this study, In2O3 thin films were deposited on quartz substrates bypulsed laser deposition technique at room temperature and followed bythermally annealing at 300℃, 400℃ and 500℃ for 1 hour. The optical bandgap was found to increase with the annealing temperature from 3.5 to 3.85 eVand the transmittance was observed above 90%. XRD results show that the filmsare polycrystalline in nature and crystallizes with preferred orientation (222).SEM images show that the films are
first_indexed 2024-03-08T06:16:16Z
format Article
id doaj.art-32d50623885b4d248a8153d33acc6162
institution Directory Open Access Journal
issn 1681-6900
2412-0758
language English
last_indexed 2024-03-08T06:16:16Z
publishDate 2018-12-01
publisher Unviversity of Technology- Iraq
record_format Article
series Engineering and Technology Journal
spelling doaj.art-32d50623885b4d248a8153d33acc61622024-02-04T17:20:11ZengUnviversity of Technology- IraqEngineering and Technology Journal1681-69002412-07582018-12-01362B12412710.30684/etj.36.2B.5175476Studying the Effect of Annealing Temperature on some Physical Properties of In2O3 Thin FilmsDuaa Mohammed0Muslim Jawad1Applied Science Department, University of Technology, Baghdad, Iraq.Applied Science Department, University of Technology, Baghdad, IraqIn this study, In2O3 thin films were deposited on quartz substrates bypulsed laser deposition technique at room temperature and followed bythermally annealing at 300℃, 400℃ and 500℃ for 1 hour. The optical bandgap was found to increase with the annealing temperature from 3.5 to 3.85 eVand the transmittance was observed above 90%. XRD results show that the filmsare polycrystalline in nature and crystallizes with preferred orientation (222).SEM images show that the films arehttps://etj.uotechnology.edu.iq/article_175476_6ab784c89024691a7d9b3208771142ee.pdfpldin2o3 thin filmssemmorphological properties
spellingShingle Duaa Mohammed
Muslim Jawad
Studying the Effect of Annealing Temperature on some Physical Properties of In2O3 Thin Films
Engineering and Technology Journal
pld
in2o3 thin films
sem
morphological properties
title Studying the Effect of Annealing Temperature on some Physical Properties of In2O3 Thin Films
title_full Studying the Effect of Annealing Temperature on some Physical Properties of In2O3 Thin Films
title_fullStr Studying the Effect of Annealing Temperature on some Physical Properties of In2O3 Thin Films
title_full_unstemmed Studying the Effect of Annealing Temperature on some Physical Properties of In2O3 Thin Films
title_short Studying the Effect of Annealing Temperature on some Physical Properties of In2O3 Thin Films
title_sort studying the effect of annealing temperature on some physical properties of in2o3 thin films
topic pld
in2o3 thin films
sem
morphological properties
url https://etj.uotechnology.edu.iq/article_175476_6ab784c89024691a7d9b3208771142ee.pdf
work_keys_str_mv AT duaamohammed studyingtheeffectofannealingtemperatureonsomephysicalpropertiesofin2o3thinfilms
AT muslimjawad studyingtheeffectofannealingtemperatureonsomephysicalpropertiesofin2o3thinfilms