Studying the Effect of Annealing Temperature on some Physical Properties of In2O3 Thin Films
In this study, In2O3 thin films were deposited on quartz substrates bypulsed laser deposition technique at room temperature and followed bythermally annealing at 300℃, 400℃ and 500℃ for 1 hour. The optical bandgap was found to increase with the annealing temperature from 3.5 to 3.85 eVand the transm...
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Format: | Article |
Language: | English |
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Unviversity of Technology- Iraq
2018-12-01
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Series: | Engineering and Technology Journal |
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Online Access: | https://etj.uotechnology.edu.iq/article_175476_6ab784c89024691a7d9b3208771142ee.pdf |
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author | Duaa Mohammed Muslim Jawad |
author_facet | Duaa Mohammed Muslim Jawad |
author_sort | Duaa Mohammed |
collection | DOAJ |
description | In this study, In2O3 thin films were deposited on quartz substrates bypulsed laser deposition technique at room temperature and followed bythermally annealing at 300℃, 400℃ and 500℃ for 1 hour. The optical bandgap was found to increase with the annealing temperature from 3.5 to 3.85 eVand the transmittance was observed above 90%. XRD results show that the filmsare polycrystalline in nature and crystallizes with preferred orientation (222).SEM images show that the films are |
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format | Article |
id | doaj.art-32d50623885b4d248a8153d33acc6162 |
institution | Directory Open Access Journal |
issn | 1681-6900 2412-0758 |
language | English |
last_indexed | 2024-03-08T06:16:16Z |
publishDate | 2018-12-01 |
publisher | Unviversity of Technology- Iraq |
record_format | Article |
series | Engineering and Technology Journal |
spelling | doaj.art-32d50623885b4d248a8153d33acc61622024-02-04T17:20:11ZengUnviversity of Technology- IraqEngineering and Technology Journal1681-69002412-07582018-12-01362B12412710.30684/etj.36.2B.5175476Studying the Effect of Annealing Temperature on some Physical Properties of In2O3 Thin FilmsDuaa Mohammed0Muslim Jawad1Applied Science Department, University of Technology, Baghdad, Iraq.Applied Science Department, University of Technology, Baghdad, IraqIn this study, In2O3 thin films were deposited on quartz substrates bypulsed laser deposition technique at room temperature and followed bythermally annealing at 300℃, 400℃ and 500℃ for 1 hour. The optical bandgap was found to increase with the annealing temperature from 3.5 to 3.85 eVand the transmittance was observed above 90%. XRD results show that the filmsare polycrystalline in nature and crystallizes with preferred orientation (222).SEM images show that the films arehttps://etj.uotechnology.edu.iq/article_175476_6ab784c89024691a7d9b3208771142ee.pdfpldin2o3 thin filmssemmorphological properties |
spellingShingle | Duaa Mohammed Muslim Jawad Studying the Effect of Annealing Temperature on some Physical Properties of In2O3 Thin Films Engineering and Technology Journal pld in2o3 thin films sem morphological properties |
title | Studying the Effect of Annealing Temperature on some Physical Properties of In2O3 Thin Films |
title_full | Studying the Effect of Annealing Temperature on some Physical Properties of In2O3 Thin Films |
title_fullStr | Studying the Effect of Annealing Temperature on some Physical Properties of In2O3 Thin Films |
title_full_unstemmed | Studying the Effect of Annealing Temperature on some Physical Properties of In2O3 Thin Films |
title_short | Studying the Effect of Annealing Temperature on some Physical Properties of In2O3 Thin Films |
title_sort | studying the effect of annealing temperature on some physical properties of in2o3 thin films |
topic | pld in2o3 thin films sem morphological properties |
url | https://etj.uotechnology.edu.iq/article_175476_6ab784c89024691a7d9b3208771142ee.pdf |
work_keys_str_mv | AT duaamohammed studyingtheeffectofannealingtemperatureonsomephysicalpropertiesofin2o3thinfilms AT muslimjawad studyingtheeffectofannealingtemperatureonsomephysicalpropertiesofin2o3thinfilms |