Electronic structure and optical properties of Ca2Si films grown on silicon different oriented substrates and calculated from first principles

Electronic structure and optical properties of Ca2Si films grown on silicon different oriented substrates and calculated from first principles

The work considered the growth, optical properties and emerging interband transitions in Ca2Si films grown on silicon substrates with (111), (001), and (110) orientations at two temperatures (250 °C and 300 °C) using the sacrificial-template method. The optimum temperature for MBE single-phase growt...

Full description

Bibliographic Details
Main Authors: Galkin Konstantin, Kropachev Oleg, Maslov Andrei, Chernev Igor, Subbotin Evgenii, Galkin Nikolay, Alekseev Aleksey, Migas Dmitri
Format: Article
Language:English
Published: Peter the Great St.Petersburg Polytechnic University 2022-10-01
Series:St. Petersburg Polytechnical University Journal: Physics and Mathematics
Subjects:
ca2 si films
silicon
growth method
optical functions
energy band structure
ab initio calculations
Online Access:https://physmath.spbstu.ru/article/2022.58.02/

Internet

https://physmath.spbstu.ru/article/2022.58.02/

Similar Items