Determination of the density of the defect states in Hf0.5Zr0.5O2 high-k film Deposited by using rf-magnetron sputtering technique

Determination of the density of the defect states in Hf0.5Zr0.5O2 high-k film Deposited by using rf-magnetron sputtering technique

A memory structure Pt/Al2O3/Hf0.5Zr0.5O2/Al2O3/p-Si was fabricated by using atomic layer deposition and rf-magnetron sputtering techniques, and its microstructure has been investigated by using the high resolution transmission electron microscopy (HRTEM). By measuring the applied gate voltage depend...

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Bibliographic Details
Main Authors: W. Lu, J. X. Lu, X. Ou, X. J. Liu, Y. Q. Cao, A. D. Li, B. Xu, Y. D. Xia, J. Yin, Z. G. Liu
Format: Article
Language:English
Published: AIP Publishing LLC 2014-08-01
Series:AIP Advances
Online Access:http://dx.doi.org/10.1063/1.4892857

Internet

http://dx.doi.org/10.1063/1.4892857

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