Determination of the density of the defect states in Hf0.5Zr0.5O2 high-k film Deposited by using rf-magnetron sputtering technique
A memory structure Pt/Al2O3/Hf0.5Zr0.5O2/Al2O3/p-Si was fabricated by using atomic layer deposition and rf-magnetron sputtering techniques, and its microstructure has been investigated by using the high resolution transmission electron microscopy (HRTEM). By measuring the applied gate voltage depend...
| Main Authors: | , , , , , , , , , |
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| Format: | Article |
| Language: | English |
| Published: |
AIP Publishing LLC
2014-08-01
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| Series: | AIP Advances |
| Online Access: | http://dx.doi.org/10.1063/1.4892857 |
| _version_ | 1818149869833945088 |
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| author | W. Lu J. X. Lu X. Ou X. J. Liu Y. Q. Cao A. D. Li B. Xu Y. D. Xia J. Yin Z. G. Liu |
| author_facet | W. Lu J. X. Lu X. Ou X. J. Liu Y. Q. Cao A. D. Li B. Xu Y. D. Xia J. Yin Z. G. Liu |
| author_sort | W. Lu |
| collection | DOAJ |
| description | A memory structure Pt/Al2O3/Hf0.5Zr0.5O2/Al2O3/p-Si was fabricated by using atomic layer deposition and rf-magnetron sputtering techniques, and its microstructure has been investigated by using the high resolution transmission electron microscopy (HRTEM). By measuring the applied gate voltage dependence of the capacitance for the memory structure, the planar density of the trapped charges in Hf0.5Zr0.5O2 high-k film was estimated as 6.63 × 1012 cm−2, indicating a body defect density of larger than 2.21 × 1019 cm−3. It is observed that the post-annealing in N2 can reduces the defect density in Hf0.5Zr0.5O2 film, which was ascribed to the occupancy of oxygen vacancies by nitrogen atoms. |
| first_indexed | 2024-12-11T13:13:54Z |
| format | Article |
| id | doaj.art-3340caefab2f4b499b05f6f5c7880173 |
| institution | Directory Open Access Journal |
| issn | 2158-3226 |
| language | English |
| last_indexed | 2024-12-11T13:13:54Z |
| publishDate | 2014-08-01 |
| publisher | AIP Publishing LLC |
| record_format | Article |
| series | AIP Advances |
| spelling | doaj.art-3340caefab2f4b499b05f6f5c78801732022-12-22T01:06:06ZengAIP Publishing LLCAIP Advances2158-32262014-08-0148087114087114-810.1063/1.4892857009408ADVDetermination of the density of the defect states in Hf0.5Zr0.5O2 high-k film Deposited by using rf-magnetron sputtering techniqueW. Lu0J. X. Lu1X. Ou2X. J. Liu3Y. Q. Cao4A. D. Li5B. Xu6Y. D. Xia7J. Yin8Z. G. Liu9National Laboratory of Solid State Microstructures, and Department of Materials Science and Engineering, Nanjing University, Nanjing 210093, People's Republic of ChinaNational Laboratory of Solid State Microstructures, and Department of Materials Science and Engineering, Nanjing University, Nanjing 210093, People's Republic of ChinaNational Laboratory of Solid State Microstructures, and Department of Materials Science and Engineering, Nanjing University, Nanjing 210093, People's Republic of ChinaNational Laboratory of Solid State Microstructures, and Department of Materials Science and Engineering, Nanjing University, Nanjing 210093, People's Republic of ChinaNational Laboratory of Solid State Microstructures, and Department of Materials Science and Engineering, Nanjing University, Nanjing 210093, People's Republic of ChinaNational Laboratory of Solid State Microstructures, and Department of Materials Science and Engineering, Nanjing University, Nanjing 210093, People's Republic of ChinaNational Laboratory of Solid State Microstructures, and Department of Materials Science and Engineering, Nanjing University, Nanjing 210093, People's Republic of ChinaNational Laboratory of Solid State Microstructures, and Department of Materials Science and Engineering, Nanjing University, Nanjing 210093, People's Republic of ChinaNational Laboratory of Solid State Microstructures, and Department of Materials Science and Engineering, Nanjing University, Nanjing 210093, People's Republic of ChinaNational Laboratory of Solid State Microstructures, and Department of Materials Science and Engineering, Nanjing University, Nanjing 210093, People's Republic of ChinaA memory structure Pt/Al2O3/Hf0.5Zr0.5O2/Al2O3/p-Si was fabricated by using atomic layer deposition and rf-magnetron sputtering techniques, and its microstructure has been investigated by using the high resolution transmission electron microscopy (HRTEM). By measuring the applied gate voltage dependence of the capacitance for the memory structure, the planar density of the trapped charges in Hf0.5Zr0.5O2 high-k film was estimated as 6.63 × 1012 cm−2, indicating a body defect density of larger than 2.21 × 1019 cm−3. It is observed that the post-annealing in N2 can reduces the defect density in Hf0.5Zr0.5O2 film, which was ascribed to the occupancy of oxygen vacancies by nitrogen atoms.http://dx.doi.org/10.1063/1.4892857 |
| spellingShingle | W. Lu J. X. Lu X. Ou X. J. Liu Y. Q. Cao A. D. Li B. Xu Y. D. Xia J. Yin Z. G. Liu Determination of the density of the defect states in Hf0.5Zr0.5O2 high-k film Deposited by using rf-magnetron sputtering technique AIP Advances |
| title | Determination of the density of the defect states in Hf0.5Zr0.5O2 high-k film Deposited by using rf-magnetron sputtering technique |
| title_full | Determination of the density of the defect states in Hf0.5Zr0.5O2 high-k film Deposited by using rf-magnetron sputtering technique |
| title_fullStr | Determination of the density of the defect states in Hf0.5Zr0.5O2 high-k film Deposited by using rf-magnetron sputtering technique |
| title_full_unstemmed | Determination of the density of the defect states in Hf0.5Zr0.5O2 high-k film Deposited by using rf-magnetron sputtering technique |
| title_short | Determination of the density of the defect states in Hf0.5Zr0.5O2 high-k film Deposited by using rf-magnetron sputtering technique |
| title_sort | determination of the density of the defect states in hf0 5zr0 5o2 high k film deposited by using rf magnetron sputtering technique |
| url | http://dx.doi.org/10.1063/1.4892857 |
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