Etching technique of high aspect ratio silicon trenches based on CMOS-MEMS process
Etching technique of deep silicon trenches with high aspect ratio is critical in improving integration and accuracy of Micro-Electro-Mechanical Systems(MEMS)sensor array and reducing the cost of it. To fabricate silicon isolation trenches with aspect ratio equaling to 25 μm/0.8 μm,we use and compare...
| Main Authors: | , , |
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| Format: | Article |
| Language: | zho |
| Published: |
National Computer System Engineering Research Institute of China
2018-10-01
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| Series: | Dianzi Jishu Yingyong |
| Subjects: | |
| Online Access: | http://www.chinaaet.com/article/3000091705 |