Etching technique of high aspect ratio silicon trenches based on CMOS-MEMS process

Etching technique of high aspect ratio silicon trenches based on CMOS-MEMS process

Etching technique of deep silicon trenches with high aspect ratio is critical in improving integration and accuracy of Micro-Electro-Mechanical Systems(MEMS)sensor array and reducing the cost of it. To fabricate silicon isolation trenches with aspect ratio equaling to 25 μm/0.8 μm,we use and compare...

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Bibliographic Details
Main Authors: Zhang Haihua, Lv Yufei, Lu Zhongxuan
Format: Article
Language:zho
Published: National Computer System Engineering Research Institute of China 2018-10-01
Series:Dianzi Jishu Yingyong
Subjects:
cmos-mems process
high aspect ratio
deep trench etching
rie combined with bosch
Online Access:http://www.chinaaet.com/article/3000091705

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