Model Development for Threshold Voltage Stability Dependent on High Temperature Operations in Wide-Bandgap GaN-Based HEMT Power Devices

Model Development for Threshold Voltage Stability Dependent on High Temperature Operations in Wide-Bandgap GaN-Based HEMT Power Devices

Temperature-dependent threshold voltage (<i>V</i><sub>th</sub>) stability is a significant issue in the practical application of semi-conductor power devices, especially when they are undergoing a repeated high-temperature operation condition. The <i>V</i><sub&...

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Bibliographic Details
Main Authors: Huolin Huang, Feiyu Li, Zhonghao Sun, Yaqing Cao
Format: Article
Language:English
Published: MDPI AG 2018-12-01
Series:Micromachines
Subjects:
threshold voltage (<i>V</i><sub>th</sub>) stability
gallium nitride (GaN)
high electron mobility transistors (HEMTs)
analytical model
high-temperature operation
Online Access:https://www.mdpi.com/2072-666X/9/12/658

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https://www.mdpi.com/2072-666X/9/12/658

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