Model Development for Threshold Voltage Stability Dependent on High Temperature Operations in Wide-Bandgap GaN-Based HEMT Power Devices
Temperature-dependent threshold voltage (<i>V</i><sub>th</sub>) stability is a significant issue in the practical application of semi-conductor power devices, especially when they are undergoing a repeated high-temperature operation condition. The <i>V</i><sub&...
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MDPI AG
2018-12-01
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| Series: | Micromachines |
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| Online Access: | https://www.mdpi.com/2072-666X/9/12/658 |
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| author | Huolin Huang Feiyu Li Zhonghao Sun Yaqing Cao |
| author_facet | Huolin Huang Feiyu Li Zhonghao Sun Yaqing Cao |
| author_sort | Huolin Huang |
| collection | DOAJ |
| description | Temperature-dependent threshold voltage (<i>V</i><sub>th</sub>) stability is a significant issue in the practical application of semi-conductor power devices, especially when they are undergoing a repeated high-temperature operation condition. The <i>V</i><sub>th</sub> analytical model and its stability are dependent on high-temperature operations in wide-bandgap gallium nitride (GaN)-based high electron mobility transistor (HEMT) devices that were investigated in this work. The temperature effects on the physical parameters—such as barrier height, conduction band, and polarization charge—were analysed to understand the mechanism of <i>V</i><sub>th</sub> stability. The <i>V</i><sub>th</sub> analytical model under high-temperature operation was then proposed and developed to study the measurement temperatures and repeated rounds dependent on <i>V</i><sub>th</sub> stability. The validity of the model was verified by comparing the theoretical calculation data with the experimental measurement and technology computer-aided design (TCAD) simulation results. This work provides an effective theoretical reference on the <i>V</i><sub>th</sub> stability of power devices in practical, high-temperature applications. |
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| issn | 2072-666X |
| language | English |
| last_indexed | 2024-12-24T03:09:33Z |
| publishDate | 2018-12-01 |
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| spelling | doaj.art-3393d3d7ccfc49f99b141a9dcf4e34aa2022-12-21T17:17:51ZengMDPI AGMicromachines2072-666X2018-12-0191265810.3390/mi9120658mi9120658Model Development for Threshold Voltage Stability Dependent on High Temperature Operations in Wide-Bandgap GaN-Based HEMT Power DevicesHuolin Huang0Feiyu Li1Zhonghao Sun2Yaqing Cao3School of Optoelectronic Engineering and Instrumentation Science, Dalian University of Technology, Dalian 116024, ChinaSchool of Optoelectronic Engineering and Instrumentation Science, Dalian University of Technology, Dalian 116024, ChinaSchool of Optoelectronic Engineering and Instrumentation Science, Dalian University of Technology, Dalian 116024, ChinaSchool of Optoelectronic Engineering and Instrumentation Science, Dalian University of Technology, Dalian 116024, ChinaTemperature-dependent threshold voltage (<i>V</i><sub>th</sub>) stability is a significant issue in the practical application of semi-conductor power devices, especially when they are undergoing a repeated high-temperature operation condition. The <i>V</i><sub>th</sub> analytical model and its stability are dependent on high-temperature operations in wide-bandgap gallium nitride (GaN)-based high electron mobility transistor (HEMT) devices that were investigated in this work. The temperature effects on the physical parameters—such as barrier height, conduction band, and polarization charge—were analysed to understand the mechanism of <i>V</i><sub>th</sub> stability. The <i>V</i><sub>th</sub> analytical model under high-temperature operation was then proposed and developed to study the measurement temperatures and repeated rounds dependent on <i>V</i><sub>th</sub> stability. The validity of the model was verified by comparing the theoretical calculation data with the experimental measurement and technology computer-aided design (TCAD) simulation results. This work provides an effective theoretical reference on the <i>V</i><sub>th</sub> stability of power devices in practical, high-temperature applications.https://www.mdpi.com/2072-666X/9/12/658threshold voltage (<i>V</i><sub>th</sub>) stabilitygallium nitride (GaN)high electron mobility transistors (HEMTs)analytical modelhigh-temperature operation |
| spellingShingle | Huolin Huang Feiyu Li Zhonghao Sun Yaqing Cao Model Development for Threshold Voltage Stability Dependent on High Temperature Operations in Wide-Bandgap GaN-Based HEMT Power Devices Micromachines threshold voltage (<i>V</i><sub>th</sub>) stability gallium nitride (GaN) high electron mobility transistors (HEMTs) analytical model high-temperature operation |
| title | Model Development for Threshold Voltage Stability Dependent on High Temperature Operations in Wide-Bandgap GaN-Based HEMT Power Devices |
| title_full | Model Development for Threshold Voltage Stability Dependent on High Temperature Operations in Wide-Bandgap GaN-Based HEMT Power Devices |
| title_fullStr | Model Development for Threshold Voltage Stability Dependent on High Temperature Operations in Wide-Bandgap GaN-Based HEMT Power Devices |
| title_full_unstemmed | Model Development for Threshold Voltage Stability Dependent on High Temperature Operations in Wide-Bandgap GaN-Based HEMT Power Devices |
| title_short | Model Development for Threshold Voltage Stability Dependent on High Temperature Operations in Wide-Bandgap GaN-Based HEMT Power Devices |
| title_sort | model development for threshold voltage stability dependent on high temperature operations in wide bandgap gan based hemt power devices |
| topic | threshold voltage (<i>V</i><sub>th</sub>) stability gallium nitride (GaN) high electron mobility transistors (HEMTs) analytical model high-temperature operation |
| url | https://www.mdpi.com/2072-666X/9/12/658 |
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