Low temperature processed, highly stable CMOS inverter by integrating Zn-ON and tellurium thin-film transistors

Low temperature processed, highly stable CMOS inverter by integrating Zn-ON and tellurium thin-film transistors

Semiconductors processed at low temperature for complementary metal–oxide semiconductors (CMOS) devices are receiving considerable attention in the field of integrated electronic applications. In this work, we demonstrated a CMOS inverter constructed by n-type ZnON and p-type Te TFTs where all the p...

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Bibliographic Details
Main Authors: Muhammad Naqi, Seong Cheol Jang, Yongin Cho, Ji Min Park, Joo On Oh, Hyun Yeol Rho, Hyun-Suk Kim, Sunkook Kim
Format: Article
Language:English
Published: Taylor & Francis Group 2023-07-01
Series:Journal of Information Display
Subjects:
CMOS inverter
low-temperature
ZnON
tellurium
high mobility
Online Access:https://www.tandfonline.com/doi/10.1080/15980316.2023.2174195

Internet

https://www.tandfonline.com/doi/10.1080/15980316.2023.2174195

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