Single Event Transients in CMOS Ring Oscillators
In this paper, a time-variant analysis is made on Single-Event Transients (SETs) in integrated CMOS ring oscillators. The Impulse Sensitive Function (ISF) of the oscillator is used to analyze the impact of the relative moment when a particle hits the circuit. The analysis is based on simulations and...
| Main Authors: | , |
|---|---|
| Format: | Article |
| Language: | English |
| Published: |
MDPI AG
2019-06-01
|
| Series: | Electronics |
| Subjects: | |
| Online Access: | https://www.mdpi.com/2079-9292/8/6/618 |
| _version_ | 1798035372048908288 |
|---|---|
| author | Jeffrey Prinzie Valentijn De Smedt |
| author_facet | Jeffrey Prinzie Valentijn De Smedt |
| author_sort | Jeffrey Prinzie |
| collection | DOAJ |
| description | In this paper, a time-variant analysis is made on Single-Event Transients (SETs) in integrated CMOS ring oscillators. The Impulse Sensitive Function (ISF) of the oscillator is used to analyze the impact of the relative moment when a particle hits the circuit. The analysis is based on simulations and verified experimentally with a Two-Photon Absorption (TPA) laser setup. The experiments are done using a 65 nm CMOS test chip. |
| first_indexed | 2024-04-11T20:56:20Z |
| format | Article |
| id | doaj.art-33d60d1c4d2d4f8d841f5eb1c8b89e7c |
| institution | Directory Open Access Journal |
| issn | 2079-9292 |
| language | English |
| last_indexed | 2024-04-11T20:56:20Z |
| publishDate | 2019-06-01 |
| publisher | MDPI AG |
| record_format | Article |
| series | Electronics |
| spelling | doaj.art-33d60d1c4d2d4f8d841f5eb1c8b89e7c2022-12-22T04:03:39ZengMDPI AGElectronics2079-92922019-06-018661810.3390/electronics8060618electronics8060618Single Event Transients in CMOS Ring OscillatorsJeffrey Prinzie0Valentijn De Smedt1Department of Electrical Engineering (ESAT), KU Leuven, 3000 Leuven, BelgiumDepartment of Electrical Engineering (ESAT), KU Leuven, 3000 Leuven, BelgiumIn this paper, a time-variant analysis is made on Single-Event Transients (SETs) in integrated CMOS ring oscillators. The Impulse Sensitive Function (ISF) of the oscillator is used to analyze the impact of the relative moment when a particle hits the circuit. The analysis is based on simulations and verified experimentally with a Two-Photon Absorption (TPA) laser setup. The experiments are done using a 65 nm CMOS test chip.https://www.mdpi.com/2079-9292/8/6/618Single-Event Upsets (SEUs)radiation effectsRing OscillatorsImpulse Sensitive FunctionRadiation Hardening by Design |
| spellingShingle | Jeffrey Prinzie Valentijn De Smedt Single Event Transients in CMOS Ring Oscillators Electronics Single-Event Upsets (SEUs) radiation effects Ring Oscillators Impulse Sensitive Function Radiation Hardening by Design |
| title | Single Event Transients in CMOS Ring Oscillators |
| title_full | Single Event Transients in CMOS Ring Oscillators |
| title_fullStr | Single Event Transients in CMOS Ring Oscillators |
| title_full_unstemmed | Single Event Transients in CMOS Ring Oscillators |
| title_short | Single Event Transients in CMOS Ring Oscillators |
| title_sort | single event transients in cmos ring oscillators |
| topic | Single-Event Upsets (SEUs) radiation effects Ring Oscillators Impulse Sensitive Function Radiation Hardening by Design |
| url | https://www.mdpi.com/2079-9292/8/6/618 |
| work_keys_str_mv | AT jeffreyprinzie singleeventtransientsincmosringoscillators AT valentijndesmedt singleeventtransientsincmosringoscillators |