A Comparative Study of n- and p-Channel FeFETs with Ferroelectric HZO Gate Dielectric

A Comparative Study of n- and p-Channel FeFETs with Ferroelectric HZO Gate Dielectric

This study investigates the electrical characteristics observed in n-channel and p-channel ferroelectric field effect transistor (FeFET) devices fabricated through a similar process flow with 10 nm of ferroelectric hafnium zirconium oxide (HZO) as the gate dielectric. The n-FeFETs demonstrate a fast...

Full description

Bibliographic Details
Main Authors: Paul Jacob, Pooja C. Patil, Shan Deng, Kai Ni, Khushwant Sehra, Mridula Gupta, Manoj Saxena, David MacMahon, Santosh Kurinec
Format: Article
Language:English
Published: MDPI AG 2023-12-01
Series:Solids
Subjects:
ferroelectric
FeFETs
HZO
polarization
charge trapping
Online Access:https://www.mdpi.com/2673-6497/4/4/23

Internet

https://www.mdpi.com/2673-6497/4/4/23

Similar Items