Spin-resonant tunneling in ferromagnetic conductor/ semiconductor heterostructure for spin-filter application
Spin-dependent tunneling in a ferromagnetic conductor/ semiconductor is analyzed with zero external fields. The barrier transparency, dwell time, tunneling time of electrons through heterostructure and the degree of polarization efficiency are calculated in Fe/GaAs double barrier heterostructure. Th...
| Main Authors: | , , , , , , |
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| Format: | Article |
| Language: | English |
| Published: |
Elsevier
2023-11-01
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| Series: | Journal of King Saud University: Science |
| Subjects: | |
| Online Access: | http://www.sciencedirect.com/science/article/pii/S101836472300335X |