Spin-resonant tunneling in ferromagnetic conductor/ semiconductor heterostructure for spin-filter application
Spin-dependent tunneling in a ferromagnetic conductor/ semiconductor is analyzed with zero external fields. The barrier transparency, dwell time, tunneling time of electrons through heterostructure and the degree of polarization efficiency are calculated in Fe/GaAs double barrier heterostructure. Th...
| Main Authors: | , , , , , , |
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| Format: | Article |
| Language: | English |
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Elsevier
2023-11-01
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| Series: | Journal of King Saud University: Science |
| Subjects: | |
| Online Access: | http://www.sciencedirect.com/science/article/pii/S101836472300335X |
| _version_ | 1797653945476186112 |
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| author | S. Jafar Ali Ibrahim Bruno Chandrasekar S. Rajasekar N.S. Kalyan Chakravarthi M. Karunakaran Mona Braim Abdullah N. Alodhayb |
| author_facet | S. Jafar Ali Ibrahim Bruno Chandrasekar S. Rajasekar N.S. Kalyan Chakravarthi M. Karunakaran Mona Braim Abdullah N. Alodhayb |
| author_sort | S. Jafar Ali Ibrahim |
| collection | DOAJ |
| description | Spin-dependent tunneling in a ferromagnetic conductor/ semiconductor is analyzed with zero external fields. The barrier transparency, dwell time, tunneling time of electrons through heterostructure and the degree of polarization efficiency are calculated in Fe/GaAs double barrier heterostructure. The polarization efficiency of Fe/GaAs and Fe/InAs double-barrier heterostructures are compared. The Fe/GaAs has a high degree spin-polarization than Fe/InAs structure. The barrier transparency peak is sharper at the high width of the barrier. The results show that the polarization efficiency is maximum when the barrier width is maximum. The tunneling lifetime of electrons is evaluated using Heisenberg’s uncertainty principle. The spin components are completely separated at high barrier width and hence can be used effectively as a spin filter. |
| first_indexed | 2024-03-11T16:52:13Z |
| format | Article |
| id | doaj.art-342b2b1cebda4a489ab54bc59bf25c36 |
| institution | Directory Open Access Journal |
| issn | 1018-3647 |
| language | English |
| last_indexed | 2024-03-11T16:52:13Z |
| publishDate | 2023-11-01 |
| publisher | Elsevier |
| record_format | Article |
| series | Journal of King Saud University: Science |
| spelling | doaj.art-342b2b1cebda4a489ab54bc59bf25c362023-10-21T04:22:10ZengElsevierJournal of King Saud University: Science1018-36472023-11-01358102873Spin-resonant tunneling in ferromagnetic conductor/ semiconductor heterostructure for spin-filter applicationS. Jafar Ali Ibrahim0Bruno Chandrasekar1S. Rajasekar2N.S. Kalyan Chakravarthi3M. Karunakaran4Mona Braim5Abdullah N. Alodhayb6Department of Internet of Things, School of Computer Science and Engineering, Vellore Institute of Technology, Vellore 632 014, Tamilnadu, India; Corresponding authors.Department of Physics, Gandhigram Rural Institute Gandhigram, IndiaDepartment of Physics, QIS College of Engineering & Technology, Ongole 523272, IndiaCenter for Data Science, QIS College of Engineering and Technology, Ongole 523272, AP, IndiaThin Film and Nanoscience Research Lab, PG & Research Department of Physics, Alagappa Government Arts College, Karaikudi 630 003, IndiaDepartment of Physics, University of Warwick, Coventry, U.KDepartment of Physics and Astronomy, College of Science, King Saud University, Riyadh 11451, Saudi Arabia; Corresponding authors.Spin-dependent tunneling in a ferromagnetic conductor/ semiconductor is analyzed with zero external fields. The barrier transparency, dwell time, tunneling time of electrons through heterostructure and the degree of polarization efficiency are calculated in Fe/GaAs double barrier heterostructure. The polarization efficiency of Fe/GaAs and Fe/InAs double-barrier heterostructures are compared. The Fe/GaAs has a high degree spin-polarization than Fe/InAs structure. The barrier transparency peak is sharper at the high width of the barrier. The results show that the polarization efficiency is maximum when the barrier width is maximum. The tunneling lifetime of electrons is evaluated using Heisenberg’s uncertainty principle. The spin components are completely separated at high barrier width and hence can be used effectively as a spin filter.http://www.sciencedirect.com/science/article/pii/S101836472300335XFerromagnetic conductorBarrier transparencyResonance polarizationSpin-filter |
| spellingShingle | S. Jafar Ali Ibrahim Bruno Chandrasekar S. Rajasekar N.S. Kalyan Chakravarthi M. Karunakaran Mona Braim Abdullah N. Alodhayb Spin-resonant tunneling in ferromagnetic conductor/ semiconductor heterostructure for spin-filter application Journal of King Saud University: Science Ferromagnetic conductor Barrier transparency Resonance polarization Spin-filter |
| title | Spin-resonant tunneling in ferromagnetic conductor/ semiconductor heterostructure for spin-filter application |
| title_full | Spin-resonant tunneling in ferromagnetic conductor/ semiconductor heterostructure for spin-filter application |
| title_fullStr | Spin-resonant tunneling in ferromagnetic conductor/ semiconductor heterostructure for spin-filter application |
| title_full_unstemmed | Spin-resonant tunneling in ferromagnetic conductor/ semiconductor heterostructure for spin-filter application |
| title_short | Spin-resonant tunneling in ferromagnetic conductor/ semiconductor heterostructure for spin-filter application |
| title_sort | spin resonant tunneling in ferromagnetic conductor semiconductor heterostructure for spin filter application |
| topic | Ferromagnetic conductor Barrier transparency Resonance polarization Spin-filter |
| url | http://www.sciencedirect.com/science/article/pii/S101836472300335X |
| work_keys_str_mv | AT sjafaraliibrahim spinresonanttunnelinginferromagneticconductorsemiconductorheterostructureforspinfilterapplication AT brunochandrasekar spinresonanttunnelinginferromagneticconductorsemiconductorheterostructureforspinfilterapplication AT srajasekar spinresonanttunnelinginferromagneticconductorsemiconductorheterostructureforspinfilterapplication AT nskalyanchakravarthi spinresonanttunnelinginferromagneticconductorsemiconductorheterostructureforspinfilterapplication AT mkarunakaran spinresonanttunnelinginferromagneticconductorsemiconductorheterostructureforspinfilterapplication AT monabraim spinresonanttunnelinginferromagneticconductorsemiconductorheterostructureforspinfilterapplication AT abdullahnalodhayb spinresonanttunnelinginferromagneticconductorsemiconductorheterostructureforspinfilterapplication |