Hillock Related Degradation Mechanism for AlGaN-Based UVC LEDs

Hillock Related Degradation Mechanism for AlGaN-Based UVC LEDs

Heteroepitaxial growth of high Al-content AlGaN often results in a high density of threading dislocations and surface hexagonal hillocks, which degrade the performance and reliability of AlGaN-based UVC light emitting diodes (LEDs). In this study, the degradation mechanism and impurity/defect behavi...

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Bibliographic Details
Main Authors: Juntong Chen, Jianxun Liu, Yingnan Huang, Ruisen Liu, Yayu Dai, Leming Tang, Zheng Chen, Xiujian Sun, Chenshu Liu, Shuming Zhang, Qian Sun, Meixin Feng, Qiming Xu, Hui Yang
Format: Article
Language:English
Published: MDPI AG 2023-05-01
Series:Nanomaterials
Subjects:
UVC lighting emitting diodes
aluminum gallium nitride
reliability
hillock
threading dislocations
current leakage
Online Access:https://www.mdpi.com/2079-4991/13/9/1562

Internet

https://www.mdpi.com/2079-4991/13/9/1562

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