Insight into the physical mechanism of AlxGa1−xN electron blocking layer in GaN-based light emitting diodes
The effect of AlxGa1−xN electron blocking layer (EBL) on suppressing electron leakage from the multiple quantum wells (MQWs) active region has been systematically investigated by conducting the first-principles calculations. Our results revealed that the Al concentration in EBL plays a dominant role...
| Main Authors: | , , |
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| Format: | Article |
| Language: | English |
| Published: |
AIP Publishing LLC
2018-10-01
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| Series: | AIP Advances |
| Online Access: | http://dx.doi.org/10.1063/1.5046131 |