Ternary Memristic Effect of Trilayer-Structured Graphene-Based Memory Devices

A tristable memory device with a trilayer structure utilizes poly(methyl methacrylate) (PMMA) sandwiched between double-stacked novel nanocomposite films that consist of 2-(4-tert-butylphenyl)-5-(4-biphenylyl)-1,3,4-oxadiazole (PBD) doped with graphene oxide (GO). We successfully fabricated devices...

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Detalhes bibliográficos
Autor principal: Lei Li
Formato: Artigo
Idioma:English
Publicado em: MDPI AG 2019-04-01
coleção:Nanomaterials
Assuntos:
Acesso em linha:https://www.mdpi.com/2079-4991/9/4/518