Ternary Memristic Effect of Trilayer-Structured Graphene-Based Memory Devices
A tristable memory device with a trilayer structure utilizes poly(methyl methacrylate) (PMMA) sandwiched between double-stacked novel nanocomposite films that consist of 2-(4-tert-butylphenyl)-5-(4-biphenylyl)-1,3,4-oxadiazole (PBD) doped with graphene oxide (GO). We successfully fabricated devices...
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| Format: | Article |
| Language: | English |
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MDPI AG
2019-04-01
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| Series: | Nanomaterials |
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| Online Access: | https://www.mdpi.com/2079-4991/9/4/518 |
| _version_ | 1818175271070597120 |
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| author | Lei Li |
| author_facet | Lei Li |
| author_sort | Lei Li |
| collection | DOAJ |
| description | A tristable memory device with a trilayer structure utilizes poly(methyl methacrylate) (PMMA) sandwiched between double-stacked novel nanocomposite films that consist of 2-(4-tert-butylphenyl)-5-(4-biphenylyl)-1,3,4-oxadiazole (PBD) doped with graphene oxide (GO). We successfully fabricated devices consisting of single and double GO@PBD nanocomposite films embedded in polymer layers. These devices had binary and ternary nonvolatile resistive switching behaviors, respectively. Binary memristic behaviors were observed for the device with a single GO@PBD nanocomposite film, while ternary behaviors were observed for the device with the double GO@PBD nanocomposite films. The heterostructure GO@PBD/PMMA/GO@PBD demonstrated ternary charge transport on the basis of <i>I</i>–<i>V</i> fitting curves and energy-band diagrams. Tristable memory properties could be enhanced by this novel trilayer structure. These results show that the novel graphene-based memory devices with trilayer structure can be applied to memristic devices. Charge trap materials with this innovative architecture for memristic devices offer a novel design scheme for multi-bit data storage. |
| first_indexed | 2024-12-11T19:57:38Z |
| format | Article |
| id | doaj.art-34a737b082d0408eaf00939708593381 |
| institution | Directory Open Access Journal |
| issn | 2079-4991 |
| language | English |
| last_indexed | 2024-12-11T19:57:38Z |
| publishDate | 2019-04-01 |
| publisher | MDPI AG |
| record_format | Article |
| series | Nanomaterials |
| spelling | doaj.art-34a737b082d0408eaf009397085933812022-12-22T00:52:36ZengMDPI AGNanomaterials2079-49912019-04-019451810.3390/nano9040518nano9040518Ternary Memristic Effect of Trilayer-Structured Graphene-Based Memory DevicesLei Li0Key Laboratories of Senior-Education for Electronic Engineering, Heilongjiang University, Harbin 150080, ChinaA tristable memory device with a trilayer structure utilizes poly(methyl methacrylate) (PMMA) sandwiched between double-stacked novel nanocomposite films that consist of 2-(4-tert-butylphenyl)-5-(4-biphenylyl)-1,3,4-oxadiazole (PBD) doped with graphene oxide (GO). We successfully fabricated devices consisting of single and double GO@PBD nanocomposite films embedded in polymer layers. These devices had binary and ternary nonvolatile resistive switching behaviors, respectively. Binary memristic behaviors were observed for the device with a single GO@PBD nanocomposite film, while ternary behaviors were observed for the device with the double GO@PBD nanocomposite films. The heterostructure GO@PBD/PMMA/GO@PBD demonstrated ternary charge transport on the basis of <i>I</i>–<i>V</i> fitting curves and energy-band diagrams. Tristable memory properties could be enhanced by this novel trilayer structure. These results show that the novel graphene-based memory devices with trilayer structure can be applied to memristic devices. Charge trap materials with this innovative architecture for memristic devices offer a novel design scheme for multi-bit data storage.https://www.mdpi.com/2079-4991/9/4/518GO@PBD/PMMA/GO@PBD heterostructureternary trilayer-structured memristorgraphene-based memorytristable memory |
| spellingShingle | Lei Li Ternary Memristic Effect of Trilayer-Structured Graphene-Based Memory Devices Nanomaterials GO@PBD/PMMA/GO@PBD heterostructure ternary trilayer-structured memristor graphene-based memory tristable memory |
| title | Ternary Memristic Effect of Trilayer-Structured Graphene-Based Memory Devices |
| title_full | Ternary Memristic Effect of Trilayer-Structured Graphene-Based Memory Devices |
| title_fullStr | Ternary Memristic Effect of Trilayer-Structured Graphene-Based Memory Devices |
| title_full_unstemmed | Ternary Memristic Effect of Trilayer-Structured Graphene-Based Memory Devices |
| title_short | Ternary Memristic Effect of Trilayer-Structured Graphene-Based Memory Devices |
| title_sort | ternary memristic effect of trilayer structured graphene based memory devices |
| topic | GO@PBD/PMMA/GO@PBD heterostructure ternary trilayer-structured memristor graphene-based memory tristable memory |
| url | https://www.mdpi.com/2079-4991/9/4/518 |
| work_keys_str_mv | AT leili ternarymemristiceffectoftrilayerstructuredgraphenebasedmemorydevices |