Impact of post-deposition anneal on ALD Al2O3/etched GaN interface for gate-first MOSc-HEMT

Impact of post-deposition anneal on ALD Al2O3/etched GaN interface for gate-first MOSc-HEMT

MOS High Electron Mobility Transistors (MOS-HEMTs) may suffer from VTH instability and hysteresis reducing device performances. Post-Deposition Anneal (PDA) of the Atomic-Layer Deposited (ALD) dielectric has the potential to increase MOS-HEMT performances but needs to be compatible with the actual i...

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Bibliographic Details
Main Authors: P. Fernandes Paes Pinto Rocha, L. Vauche, B. Mohamad, W. Vandendaele, E. Martinez, M. Veillerot, T. Spelta, N. Rochat, R. Gwoziecki, B. Salem, V. Sousa
Format: Article
Language:English
Published: Elsevier 2023-03-01
Series:Power Electronic Devices and Components
Subjects:
Post-deposition anneal
Al2O3
GaN
MOS
ALD
Hard X-Ray photoelectron spectroscopy
Online Access:http://www.sciencedirect.com/science/article/pii/S2772370423000019

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http://www.sciencedirect.com/science/article/pii/S2772370423000019

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