Eighty nine‐watt cascaded multistage power amplifier using gallium nitride‐on‐silicon high electron mobility transistor for L‐band radar applications

Eighty nine‐watt cascaded multistage power amplifier using gallium nitride‐on‐silicon high electron mobility transistor for L‐band radar applications

Abstract This work presents a gallium nitride (GaN) high electron mobility transistor (HEMT)–based cascaded multistage power amplifier (MPA) in class‐AB for L‐band radar applications. The purpose of this endeavour is to develop an MPA using GaN HEMT devices to achieve optimised parameters such as hi...

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Bibliographic Details
Main Authors: Khizar Hayat, Salahuddin Zafar, Tariq Mehmood, Busra Cankaya Akoglu, Ekmel Ozbay, Ahsan Kashif
Format: Article
Language:English
Published: Hindawi-IET 2021-11-01
Series:IET Circuits, Devices and Systems
Subjects:
high electron mobility transistors
gallium compounds
III‐V semiconductors
UHF power amplifiers
wide band gap semiconductors
intermodulation
Online Access:https://doi.org/10.1049/cds2.12075

Internet

https://doi.org/10.1049/cds2.12075

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