The Fabrication and Characterization of InAlAs/InGaAs APDs Based on a Mesa-Structure with Polyimide Passivation

The Fabrication and Characterization of InAlAs/InGaAs APDs Based on a Mesa-Structure with Polyimide Passivation

This paper presents a novel front-illuminated InAlAs/InGaAs separate absorption, grading, field-control and multiplication (SAGFM) avalanche photodiodes (APDs) with a mesa-structure for high speed response. The electric fields in the InAlAs-multiplication layer and InGaAs-absorption layer enable hig...

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Bibliographic Details
Main Authors: Jheng-Jie Liu, Wen-Jeng Ho, June-Yan Chen, Jian-Nan Lin, Chi-Jen Teng, Chia-Chun Yu, Yen-Chu Li, Ming-Jui Chang
Format: Article
Language:English
Published: MDPI AG 2019-08-01
Series:Sensors
Subjects:
avalanche photodiodes
InAlAs
InP
multiplication gain
polyamide passivation
eye-diagrams
Online Access:https://www.mdpi.com/1424-8220/19/15/3399

Internet

https://www.mdpi.com/1424-8220/19/15/3399

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