PEALD-Grown Crystalline AlN Films on Si (100) with Sharp Interface and Good Uniformity

PEALD-Grown Crystalline AlN Films on Si (100) with Sharp Interface and Good Uniformity

Abstract Aluminum nitride (AlN) thin films were deposited on Si (100) substrates by using plasma-enhanced atomic layer deposition method (PEALD). Optimal PEALD parameters for AlN deposition were investigated. Under saturated deposition conditions, the clearly resolved fringes are observed from X-ray...

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Bibliographic Details
Main Authors: Sanjie Liu, Mingzeng Peng, Caixia Hou, Yingfeng He, Meiling Li, Xinhe Zheng
Format: Article
Language:English
Published: SpringerOpen 2017-04-01
Series:Nanoscale Research Letters
Subjects:
Aluminum nitride
PEALD
Sharp interface
Good uniformity
Online Access:http://link.springer.com/article/10.1186/s11671-017-2049-1

Internet

http://link.springer.com/article/10.1186/s11671-017-2049-1

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