PEALD-Grown Crystalline AlN Films on Si (100) with Sharp Interface and Good Uniformity
Abstract Aluminum nitride (AlN) thin films were deposited on Si (100) substrates by using plasma-enhanced atomic layer deposition method (PEALD). Optimal PEALD parameters for AlN deposition were investigated. Under saturated deposition conditions, the clearly resolved fringes are observed from X-ray...
| Main Authors: | , , , , , |
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| Format: | Article |
| Language: | English |
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SpringerOpen
2017-04-01
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| Series: | Nanoscale Research Letters |
| Subjects: | |
| Online Access: | http://link.springer.com/article/10.1186/s11671-017-2049-1 |
| _version_ | 1797708175899623424 |
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| author | Sanjie Liu Mingzeng Peng Caixia Hou Yingfeng He Meiling Li Xinhe Zheng |
| author_facet | Sanjie Liu Mingzeng Peng Caixia Hou Yingfeng He Meiling Li Xinhe Zheng |
| author_sort | Sanjie Liu |
| collection | DOAJ |
| description | Abstract Aluminum nitride (AlN) thin films were deposited on Si (100) substrates by using plasma-enhanced atomic layer deposition method (PEALD). Optimal PEALD parameters for AlN deposition were investigated. Under saturated deposition conditions, the clearly resolved fringes are observed from X-ray reflectivity (XRR) measurements, showing the perfectly smooth interface between the AlN film and Si (100). It is consistent with high-resolution image of the sharp interface analyzed by transmission electron microscope (TEM). The highly uniform thickness throughout the 2-inch size AlN film with blue covered surface was determined by spectroscopic ellipsometry (SE). Grazing incident X-ray diffraction (GIXRD) patterns indicate that the AlN films are polycrystalline with wurtzite structure and have a tendency to form (002) preferential orientation with increasing of the thickness. The obtained AlN films could open up a new approach of research in the use of AlN as the template to support gallium nitride (GaN) growth on silicon substrates. |
| first_indexed | 2024-03-12T06:17:31Z |
| format | Article |
| id | doaj.art-35618187562b42068ed5c0ec8be3ff92 |
| institution | Directory Open Access Journal |
| issn | 1931-7573 1556-276X |
| language | English |
| last_indexed | 2024-03-12T06:17:31Z |
| publishDate | 2017-04-01 |
| publisher | SpringerOpen |
| record_format | Article |
| series | Nanoscale Research Letters |
| spelling | doaj.art-35618187562b42068ed5c0ec8be3ff922023-09-03T02:25:30ZengSpringerOpenNanoscale Research Letters1931-75731556-276X2017-04-011211610.1186/s11671-017-2049-1PEALD-Grown Crystalline AlN Films on Si (100) with Sharp Interface and Good UniformitySanjie Liu0Mingzeng Peng1Caixia Hou2Yingfeng He3Meiling Li4Xinhe Zheng5School of Mathematics and Physics, Beijing Key Laboratory for Magneto-Photoelectrical Composite and Interface Science, University of Science and Technology BeijingSchool of Mathematics and Physics, Beijing Key Laboratory for Magneto-Photoelectrical Composite and Interface Science, University of Science and Technology BeijingSchool of Mathematics and Physics, Beijing Key Laboratory for Magneto-Photoelectrical Composite and Interface Science, University of Science and Technology BeijingSchool of Mathematics and Physics, Beijing Key Laboratory for Magneto-Photoelectrical Composite and Interface Science, University of Science and Technology BeijingSchool of Mathematics and Physics, Beijing Key Laboratory for Magneto-Photoelectrical Composite and Interface Science, University of Science and Technology BeijingSchool of Mathematics and Physics, Beijing Key Laboratory for Magneto-Photoelectrical Composite and Interface Science, University of Science and Technology BeijingAbstract Aluminum nitride (AlN) thin films were deposited on Si (100) substrates by using plasma-enhanced atomic layer deposition method (PEALD). Optimal PEALD parameters for AlN deposition were investigated. Under saturated deposition conditions, the clearly resolved fringes are observed from X-ray reflectivity (XRR) measurements, showing the perfectly smooth interface between the AlN film and Si (100). It is consistent with high-resolution image of the sharp interface analyzed by transmission electron microscope (TEM). The highly uniform thickness throughout the 2-inch size AlN film with blue covered surface was determined by spectroscopic ellipsometry (SE). Grazing incident X-ray diffraction (GIXRD) patterns indicate that the AlN films are polycrystalline with wurtzite structure and have a tendency to form (002) preferential orientation with increasing of the thickness. The obtained AlN films could open up a new approach of research in the use of AlN as the template to support gallium nitride (GaN) growth on silicon substrates.http://link.springer.com/article/10.1186/s11671-017-2049-1Aluminum nitridePEALDSharp interfaceGood uniformity |
| spellingShingle | Sanjie Liu Mingzeng Peng Caixia Hou Yingfeng He Meiling Li Xinhe Zheng PEALD-Grown Crystalline AlN Films on Si (100) with Sharp Interface and Good Uniformity Nanoscale Research Letters Aluminum nitride PEALD Sharp interface Good uniformity |
| title | PEALD-Grown Crystalline AlN Films on Si (100) with Sharp Interface and Good Uniformity |
| title_full | PEALD-Grown Crystalline AlN Films on Si (100) with Sharp Interface and Good Uniformity |
| title_fullStr | PEALD-Grown Crystalline AlN Films on Si (100) with Sharp Interface and Good Uniformity |
| title_full_unstemmed | PEALD-Grown Crystalline AlN Films on Si (100) with Sharp Interface and Good Uniformity |
| title_short | PEALD-Grown Crystalline AlN Films on Si (100) with Sharp Interface and Good Uniformity |
| title_sort | peald grown crystalline aln films on si 100 with sharp interface and good uniformity |
| topic | Aluminum nitride PEALD Sharp interface Good uniformity |
| url | http://link.springer.com/article/10.1186/s11671-017-2049-1 |
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