Poole–Frenkel (PF)-MOS: A Proposal for the Ultimate Scale of an MOS Transistor
This work reports, for the first time, the phenomenon of lateral Poole–Frenkel current conduction along the dielectric/Si interface of a silicon nanowire metal-oxide semiconductor (MOS) transistor. This discovery has a great impact on the study of device characteristic modeling and device reliabilit...
| Main Authors: | , |
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| Format: | Article |
| Language: | English |
| Published: |
MDPI AG
2023-01-01
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| Series: | Nanomaterials |
| Subjects: | |
| Online Access: | https://www.mdpi.com/2079-4991/13/3/411 |