3-D Self-Aligned Stacked Ge Nanowire pGAAFET on Si nFinFET of Single Gate CFET

3-D Self-Aligned Stacked Ge Nanowire pGAAFET on Si nFinFET of Single Gate CFET

In this study, we propose a self-aligned stacked Ge nanowire (NW) p-type gate-all-around field-effect transistor (pGAAFET) on Si nFinFET of single gate complementary FET (CFET). The self-aligned stacked Ge NW pGAAFET on Si nFinFET of single gate CFET device is fabricated on a SOI wafer. The CFET dev...

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Bibliographic Details
Main Authors: Yi-Wen Lin, Shan-Wen Lin, Bo-An Chen, Chong-Jhe Sun, Siao-Cheng Yan, Guang-Li Luo, Yung-Chun Wu, Fu-Ju Hou
Format: Article
Language:English
Published: IEEE 2023-01-01
Series:IEEE Journal of the Electron Devices Society
Subjects:
Self-aligned
Ge nanowire (NW)
Si FinFET
complementary FET (CFET)
single gate
Online Access:https://ieeexplore.ieee.org/document/10233696/

Internet

https://ieeexplore.ieee.org/document/10233696/

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