| Summary: | Perfluorinated compounds (PFCs) are used for manufacturing purposes in the semiconductor and display industries, resulting in an increased need for emission reduction due to the significant global warming potential of the associated greenhouse gases. The decomposition characteristics of etch-type and water film (WF)-type plasma-wet scrubbers were investigated. The PFCs used in the study were CF<sub>4</sub>, SF<sub>6</sub>, NF<sub>3</sub>, CHF<sub>3</sub>, C<sub>2</sub>F<sub>6</sub>, C<sub>3</sub>F<sub>8</sub>, and C<sub>4</sub>F<sub>8</sub>, and the destruction removal efficiency (DRE) and by-product gas generation rate were confirmed based on the changes in the parameters (total flow rate and power) of the plasma-wet scrubber. When the total flow rate reached 100 L/min and the measured maximum power (11 kW), the reduction efficiency of CF<sub>4</sub> in the etch type was 95.60% and the DRE of other PFCs was 99.99%. Moreover, for the WF type, the DRE of CF<sub>4</sub> was 90.06%, that of SF<sub>6</sub> was 96.44%, and that of other PFCs was 99.99%. When the total flow rate reached 300 L/min and 11 kW, the DRE of SF<sub>6</sub> in the etch type was 99%, and the DRE of NF<sub>3</sub>, CHF<sub>3</sub>, C<sub>2</sub>F<sub>6</sub>, C<sub>3</sub>F<sub>8</sub>, and C<sub>4</sub>F<sub>8</sub> was 95.57%, 87.06%, 70.74%, 81.45%, and 95.59%, respectively. In addition, in the WF type, the DRE of SF<sub>6</sub> was 94.39%, and the DRE of NF<sub>3</sub>, CHF<sub>3</sub>, C<sub>2</sub>F<sub>6</sub>, C<sub>3</sub>F<sub>8</sub>, and C<sub>4</sub>F<sub>8</sub> was 99.80%, 95.34%, 85.38%, 88.49%, and 98.22%, respectively. The decomposition efficiency was high for the etch type for gases with small flow rates or no by-product gas generation. The by-product gas generation rate was significantly lower for the WF type.
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