Fabrication of a Hole‐Type Vertical Resistive‐Switching Random‐Access Array and Intercell Interference Induced by Lateral Charge Spreading

Fabrication of a Hole‐Type Vertical Resistive‐Switching Random‐Access Array and Intercell Interference Induced by Lateral Charge Spreading

Abstract A hole‐type vertical structure is adopted to fabricate a vertically stacked resistive switching random access memory (ReRAM) array. The vertical configuration is more advantageous in lowering the process cost and increasing integration density than the horizontal configuration. However, the...

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Bibliographic Details
Main Authors: Seung Soo Kim, Soo Kyeom Yong, Jihun Kim, Jin Myung Choi, Tae Won Park, Hyun Young Kim, Hae Jin Kim, Cheol Seong Hwang
Format: Article
Language:English
Published: Wiley-VCH 2023-03-01
Series:Advanced Electronic Materials
Subjects:
Al‐doped HfO 2
intercell interference
lateral charge spreading
self‐rectifying memory
vertical resistive switching memory
Online Access:https://doi.org/10.1002/aelm.202200998

Internet

https://doi.org/10.1002/aelm.202200998

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