Photodetection Properties of CdS/Si Heterojunction Prepared by Pulsed Laser Ablation in DMSO Solution for Optoelectronic Application

Photodetection Properties of CdS/Si Heterojunction Prepared by Pulsed Laser Ablation in DMSO Solution for Optoelectronic Application

The high-quality n-type CdS on a p-type Si (111) photodetector device was prepared for the first time by a one-pot method based on an ns laser ablation method in a liquid medium. Cadmium target was ablated in DMSO solution, containing sulfur precursor, and stirred, assisting in 1D-growth, to create...

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Bibliographic Details
Main Authors: Fatemah H. Alkallas, Shoug M. Alghamdi, Ameenah N. Al-Ahmadi, Amira Ben Gouider Trabelsi, Eman A. Mwafy, W. B. Elsharkawy, Emaan Alsubhe, Ayman M. Mostafa, Reham A. Rezk
Format: Article
Language:English
Published: MDPI AG 2023-07-01
Series:Micromachines
Subjects:
laser ablation
nanomaterials
PVA
optical properties
heterojunctions
Online Access:https://www.mdpi.com/2072-666X/14/8/1546

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https://www.mdpi.com/2072-666X/14/8/1546

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