Modeling Si/SiGe quantum dot variability induced by interface disorder reconstructed from multiperspective microscopy

Modeling Si/SiGe quantum dot variability induced by interface disorder reconstructed from multiperspective microscopy

Abstract SiGe heteroepitaxial growth yields pristine host material for quantum dot qubits, but residual interface disorder can lead to qubit-to-qubit variability that might pose an obstacle to reliable SiGe-based quantum computing. By convolving data from scanning tunneling microscopy and high-angle...

Full description

Bibliographic Details
Main Authors: Luis Fabián Peña, Justine C. Koepke, Joseph Houston Dycus, Andrew Mounce, Andrew D. Baczewski, N. Tobias Jacobson, Ezra Bussmann
Format: Article
Language:English
Published: Nature Portfolio 2024-03-01
Series:npj Quantum Information
Online Access:https://doi.org/10.1038/s41534-024-00827-8

Internet

https://doi.org/10.1038/s41534-024-00827-8

Similar Items