Modeling and Simulations of 4H-SiC/6H-SiC/4H-SiC Single Quantum-Well Light Emitting Diode Using Diffusion Bonding Technique
In the last decade, silicon carbide (SiC) has emerged as a potential material for high-frequency electronics and optoelectronics applications that may require elevated temperature processing. SiC exists in more than 200 different crystallographic forms, referred to as polytypes. Based on their remar...
| Main Authors: | , , , , , |
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| Format: | Article |
| Language: | English |
| Published: |
MDPI AG
2021-11-01
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| Series: | Micromachines |
| Subjects: | |
| Online Access: | https://www.mdpi.com/2072-666X/12/12/1499 |