Growth and Characterization of AlxGa1-xAs Obtained by Metallic-Arsenic-Based-MOCVD

Growth and Characterization of AlxGa1-xAs Obtained by Metallic-Arsenic-Based-MOCVD

In this work reports results related to growth and characterization of AlxGa1-xAs epilayers, which were grown in a metallic-arsenic-based-MOCVD system. The gallium and aluminium used precursors were trimethylgallium (TMGa) and trimethylaluminium (TMAl), respectively. By photoluminescence measurement...

Deskribapen osoa

Xehetasun bibliografikoak
Egile Nagusiak: Roberto Saúl Castillo-Ojeda, Joel Díaz-Reyes, Miguel Galván Arellano, María de la Cruz Peralta-Clara, Julieta Salomé Veloz-Rendón
Formatua: Artikulua
Hizkuntza:English
Argitaratua: Associação Brasileira de Metalurgia e Materiais (ABM); Associação Brasileira de Cerâmica (ABC); Associação Brasileira de Polímeros (ABPol) 2017-03-01
Saila:Materials Research
Gaiak:
Elemental arsenic
MOCVD-AlxGa1-xAs/GaAs epilayers
Hall Effect
12K photoluminescence
Atomic force microscopy surface morphology
Sarrera elektronikoa:http://www.scielo.br/scielo.php?script=sci_arttext&pid=S1516-14392017000501166&tlng=en

Internet

http://www.scielo.br/scielo.php?script=sci_arttext&pid=S1516-14392017000501166&tlng=en

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